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Anti-single event transient pulse cmos circuit

A transient pulse and anti-single event technology, which is applied in the direction of pulse technology, logic circuits, electrical components, etc., can solve the problem of large hardware consumption, and achieve the effect of small quantity, low power consumption and small area

Active Publication Date: 2016-01-27
BEIJING ZHONGKE XINWEITE SCI & TECH DEV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method also needs to implement two stages of phase delay, as well as three latches and adjudication circuits, which consumes a lot of hardware

Method used

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  • Anti-single event transient pulse cmos circuit

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Embodiment Construction

[0030] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0031] figure 1 A schematic structural diagram of a CMOS circuit for anti-single event transient pulse provided by an embodiment of the present invention is shown. This single-event transient-immune CMOS circuit consists of:

[0032] The first buffer 101, its input terminal receives the input signal in, and its output terminal outputs the first buffer signal out1, which is used to eliminate the "low high low" type pulse;

[0033] The second buffer 102, its input terminal receives the input signal in, and its output terminal outputs the second buffer signal out2, which is used to eliminate the "high low high" type pulse;

[0034] The first PMOS transistor 103, the third PMOS transistor 105, the first NMOS transistor 107 ...

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Abstract

The invention provides a single-particle-resistant transient pulse CMOS (complementary metal oxide semiconductor) circuit. The single-particle-resistant transient pulse CMOS circuit comprises a first buffer, a second buffer and eight MOS (metal oxide semiconductor) transistors, wherein the input end of the first buffer receives an input signal, outputs a first buffering signal (out1), and is used for eliminating 'low-high-low' type pulses; the input end of the second buffer receives the input signal, outputs a second buffering signal (out2) and is used for eliminating 'high-low-high' type pulses; a signal (out_inv) outputted from the MOS transistors meets a phase inverter; the signal (out _inv) is inputted by the MOS transistors; and an output signal (out) serves as an output signal of the single-particle-resistant transient pulse CMOS circuit. By using the buffers with different upward / downward pulling driving abilities, the signal (out1) and the signal (out2) which disturb the pulses can be filtered out respectively. By using the eight MOS transistors and the phase inverter, two types of disturbing pulses can be filtered out by the output signal (out).

Description

technical field [0001] The invention relates to the technical field of anti-radiation hardened circuits, in particular, the invention relates to an anti-single-event transient pulse circuit. Background technique [0002] Aerospace technology is an important symbol to measure a country's modernization level and comprehensive national strength. Integrated circuits are the core of spacecraft, and their performance and functions have become one of the main indicators for measuring the performance of various spacecraft. In order to meet the current and future challenges of aerospace technology development, countries are actively developing integrated circuits with high performance and high radiation resistance. In recent years, my country's aerospace industry has developed rapidly, and major aerospace applications such as manned spaceflight projects, lunar exploration projects, "Beidou" navigation and positioning systems, and "Tiangong" have put forward urgent needs for radiation...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K19/0948
Inventor 宿晓慧毕津顺罗家俊韩郑生郝乐
Owner BEIJING ZHONGKE XINWEITE SCI & TECH DEV