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A kind of array substrate and its preparation method, display device

An array substrate and via hole technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, transistors, etc., can solve the problems of high production cost, increased difficulty of TFT array substrate process, low yield rate of TFT array substrate, etc., to reduce production cost, the number of simplification of the patterning process, and the effect of improving production efficiency

Active Publication Date: 2016-02-17
BOE TECH GRP CO LTD
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Problems solved by technology

And each patterning process includes processes such as film formation, exposure, development, etching and stripping; obviously, the more times of patterning process, the higher the manufacturing cost of TFT array substrate, correspondingly, it will lead to the preparation of TFT array substrate. The increase in process difficulty may cause instability in the performance of the TFT array substrate, that is, the lower the yield of the TFT array substrate

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  • A kind of array substrate and its preparation method, display device
  • A kind of array substrate and its preparation method, display device
  • A kind of array substrate and its preparation method, display device

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preparation example Construction

[0038] An embodiment of the present invention provides a method for preparing an array substrate 01, such as figure 1 As shown, the preparation method comprises the following three main steps:

[0039] S01 , forming a pattern layer including the pixel electrode 20 , and a pattern layer including the gate electrode 30 and the gate line on the base substrate 10 through a patterning process.

[0040] S02. On the substrate on which the patterned layer including the gate electrode 30 and the gate line is formed, at most two patterning processes are used to form the gate insulating layer 40, at least including the metal oxide semiconductor active layer 50 A pattern layer, and a pattern layer including at least the etching stopper layer 60 .

[0041] Wherein, a first via hole 71 exposing the pixel electrode 20 is formed above the pixel electrode 20 .

[0042] S03. On the substrate formed with the etching stopper layer 60, a pattern layer including the source electrode 80a, the drai...

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Abstract

Embodiments of the present invention provide an array substrate, a preparation method thereof, and a display device, which relate to the field of display technology, and can reduce the number of patterning processes and save costs. The method includes: forming a pattern layer including a pixel electrode, a gate electrode, and a pattern layer on a substrate through a patterning process once; A patterning process forms a gate insulating layer, a pattern layer including at least a metal oxide semiconductor active layer, and a pattern layer including at least an etching stopper layer; wherein, a first via hole exposing the pixel electrode is formed above the pixel electrode; On the substrate of the etch barrier layer, a pattern layer including source electrodes, drain electrodes and data lines is formed through a patterning process; wherein, both the source electrodes and the drain electrodes are in contact with the metal oxide semiconductor active layer, and the drain electrodes and the pixel electrodes pass through The first via hole is electrically connected. Used in the preparation of array substrates, display devices, etc.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to an array substrate, a preparation method thereof, and a display device. Background technique [0002] According to the different materials used in the active layer in the thin film transistor (ThinFilmTransistor, referred to as TFT) structure, TFT can be divided into: amorphous silicon TFT, polysilicon TFT, single crystal silicon TFT and metal oxide semiconductor TFT; among them, metal oxide The material semiconductor TFT has high carrier mobility, which can better meet the driving requirements of super-large liquid crystal displays, and the metal oxide semiconductor TFT also has the characteristics of uniform composition, low cost, and high transparency. Therefore, it has attracted the attention of researchers. [0003] In the prior art, when etching the metal layer of the source electrode and the drain electrode above the metal oxide semiconductor active layer, the me...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/77H01L27/12H01L29/786
CPCH01L27/127H01L27/1225H01L21/28008H01L2924/0002H01L21/0274H01L21/31144H01L21/32139H01L29/4908H01L27/1222H01L27/1288H01L29/66969H01L29/7869H01L2924/00H01L21/02565H01L21/441H01L21/469H01L21/47573H01L21/47635H01L21/56H01L21/76831H01L23/3171H01L23/5226H01L23/528H01L27/124H01L27/1259H01L29/24
Inventor 刘翔
Owner BOE TECH GRP CO LTD