Etching cavity capable of adjusting electrode spacing distance and parallelism degree

Abstract

The invention discloses an etching cavity capable of adjusting an electrode spacing distance and parallelism degree. The etching cavity comprises a cavity, an upper electrode, a lower electrode and a variable cavity. The cavity presents to be a cylindrical cavity. The upper electrode is fixedly installed on the upper top surface of the cavity. The lower electrode is fixedly installed on the lower bottom surface of the cavity. The variable cavity is arranged inside the cavity and used for adjusting the distance and parallelism degree between the upper electrode and the lower electrode. The distance between the upper electrode and the lower electrode can be varied, and parallelism degree between the upper electrode and the lower electrode can be appropriately adjusted so that in-plane uniformity is optimized, and uniformity of any one of testing points in a wafer with diameter of 200mm is ensured to be less than 2%. Meanwhile, etching rate is not varied obviously so that requirements of special products are met.

Description

technical field [0001] The invention relates to a semiconductor integrated circuit manufacturing equipment, in particular to a cavity with adjustable electrode spacing and parallelism. Background technique [0002] like figure 1 As shown, the existing etching cavity includes a cavity 1, which is a cylindrical cavity; the upper electrode 2 is fixedly installed on the upper top surface of the cavity; the lower electrode 3 is fixedly installed on the cavity The lower bottom surface; the distance between the upper electrode 2 and the lower electrode 3 is fixed and the upper electrode 2 and the lower electrode 3 are always parallel to each other. Ideally, the ion plasma 4 distribution in the etching chamber, such as figure 2 shown. However, in the actual production process, due to the different positions where the etching gas enters the cavity, the different areas where the RF power acts, and the differences in the position of the air inlet of the molecular pump or dry pump, ...

AI Technical Summary

Problems solved by technology

However, in the actual production process, due to the different positions where the etching gas enters the cavity, the different areas where the RF power acts, and the differences in the position of the air inlet of the molecular pump or dry pump, etc., the same type of cavity will be etched uniformly. If the distance between the upper and lower electrodes is fixed or the upper and lower electrodes are always parallel to each other, it is difficult to meet the requirement that the in-plane uniformity of the test point is less than 2% (200mm wafer)

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