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System and method for temperature control of a semiconductor wafer

A semiconductor and wafer technology, applied in the field of semiconductor wafer temperature control systems, which can solve problems such as frame misalignment, increased defect center uncertainty, magnified spots, etc.

Active Publication Date: 2014-02-12
APPL MATERIALS ISRAEL LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Furthermore, thermal expansion between defect detection and class image acquisition increases the uncertainty of defect centering when inspection tools are required to provide class images with defect concentrations within 10% of the image size
[0006] Thermal expansion that exists during image acquisition can also lead to misalignment of the frame, equivalent to magnification of the spot

Method used

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  • System and method for temperature control of a semiconductor wafer
  • System and method for temperature control of a semiconductor wafer
  • System and method for temperature control of a semiconductor wafer

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Embodiment Construction

[0026] In the following detailed description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, it will be understood by those skilled in the art that the present invention may be practiced without these specific details. In other instances, well-known methods, procedures, and components have not been described in detail so as not to obscure the present invention.

[0027] Since the described embodiments of the invention may be implemented using electronic devices and circuits known to those skilled in the art, no further aspects of the invention will be explained except as deemed necessary for an appreciation and understanding of the basic concepts of the invention. details so as not to obscure or distract from the teaching of the invention.

[0028] figure 1 A method 100 according to one embodiment of the invention is illustrated.

[0029] Method 100 may begin at step 110 of providing a semiconductor w...

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PUM

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Abstract

A semiconductor wafer is received at a first chamber that is at a first pressure level. The semiconductor wafer is at a first temperature and is heated, by a first heating module, to a second temperature while the pressure level of the first chamber is reduced from the first pressure level to a second pressure level. The semiconductor wafer is then provided to a supporting element of a second chamber which maintains a third pressure level that is closer to the second pressure level than to the first pressure level; the supporting element being at a third temperature that is closer to the second temperature than to the first temperature.

Description

technical field [0001] The present invention relates to systems and methods for temperature control of semiconductor wafers, such as systems and methods that assist in reducing thermal expansion of semiconductor wafers. Background technique [0002] Semiconductor wafers may be transferred from one tool to another while being exposed to ambient temperature and ambient pressure levels. The tool can process or inspect semiconductor wafers within a chamber that can maintain a temperature and pressure level that is different from ambient temperature and pressure levels. [0003] When processing or inspecting semiconductor wafers, the semiconductor wafers are typically positioned on chucks. The temperature of the chuck is higher than ambient temperature, and when the semiconductor wafer is placed on the chuck, the semiconductor wafer experiences thermal expansion. [0004] This thermal expansion adds to the level of uncertainty associated with any handling or inspection process ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/67
CPCH01L21/67248H01L21/02F27B5/18F27B17/0025F27D13/00H01L21/67098H01L21/67103H01L21/67115
Inventor L·沙维特R·克劳斯I·耶尔S·纳卡什Y·贝伦基
Owner APPL MATERIALS ISRAEL LTD