Unlock instant, AI-driven research and patent intelligence for your innovation.

Ingot furnace for producing pseudo-single crystal silicon ingot and ingot casting method for pseudo-single crystal silicon ingot

A technology similar to single crystal silicon and ingot furnace, which is applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., to achieve the effect of facilitating mass promotion

Active Publication Date: 2014-02-19
YINGLI GRP
View PDF2 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0017] The present invention aims to provide an ingot furnace for producing quasi-single crystal silicon ingots and a quasi-single crystal ingot casting method to solve the problem of facilitating the mass promotion of quasi-single crystals

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ingot furnace for producing pseudo-single crystal silicon ingot and ingot casting method for pseudo-single crystal silicon ingot
  • Ingot furnace for producing pseudo-single crystal silicon ingot and ingot casting method for pseudo-single crystal silicon ingot
  • Ingot furnace for producing pseudo-single crystal silicon ingot and ingot casting method for pseudo-single crystal silicon ingot

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] In the middle of the side heat insulating layer 80, a circle of graphite hard felt is set toward the crucible 50. The thickness of the graphite hard felt is 70mm, the width is 30mm, and the distance from the side heater 70 is 160mm.

[0048] Step 1: For 120 minutes, maintain the temperature at the top temperature measuring point at 1185°C, volatilize the impurities on the surface of the silicon material, and discharge them through the vacuum pump of the ingot furnace to ensure the purity of the silicon material, and the height of the side insulation layer 80 is zero.

[0049] Step 2: In 270 minutes, the temperature at the temperature measuring point on the inner top rises rapidly to 1510°C, and the position of the heat insulation layer 80 on the side is zero.

[0050] Step 3: In 45 minutes, the temperature at the temperature measuring point on the inner top rises slowly to 1530°C, and the position of the heat insulation layer 80 on the side is zero.

[0051] The fourth ...

Embodiment 2

[0056] In the middle of the side heat insulating layer 80, a circle of graphite hard felt is set towards the crucible 50. The thickness of the graphite hard felt is 10mm, the width is 30mm, and the distance from the side heater 70 is 350mm.

[0057] Step 1: For 90 minutes, maintain the temperature at the top temperature measuring point at 1135°C, volatilize the impurities on the surface of the silicon material, and discharge them through the vacuum pump of the ingot furnace to ensure the purity of the silicon material, and the height of the side insulation layer 80 is zero.

[0058] Step 2: In 210 minutes, the temperature at the temperature measuring point on the inner top rises rapidly to 1490°C, and the position of the heat insulation layer 80 on the side is zero.

[0059] Step 3: In 15 minutes, the temperature at the temperature measuring point on the inner top rises slowly to 1520°C, and the position of the heat insulation layer 80 on the side is zero.

[0060] The fourth ...

Embodiment 3

[0065] In the middle of the side heat insulating layer 80, a circle of graphite hard felt is set towards the crucible 50. The thickness of the graphite hard felt is 50mm, the width is 95mm, and the distance from the side heater 70 is 200mm.

[0066] Step 1: For 120 minutes, maintain the temperature at the top temperature measuring point at 1160°C, volatilize the impurities on the surface of the silicon material, and discharge them through the vacuum pump of the ingot furnace to ensure the purity of the silicon material, and the height of the side insulation layer 80 is zero.

[0067] Step 2: In 255 minutes, the temperature at the temperature measuring point on the inner top rises rapidly to 1505°C, and the position of the heat insulation layer 80 on the side is zero.

[0068] Step 3: For 40 minutes, the temperature at the temperature measuring point on the inner top rises slowly to 1530°C, and the position of the heat insulation layer 80 on the side is zero.

[0069] The fourt...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
widthaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses an ingot furnace for producing a pseudo-single crystal silicon ingot and an ingot casting method for the pseudo-single crystal silicon ingot. The ingot furnace comprises a lateral part heat insulation layer, a bottom heat insulation layer forming a cavity together with the lateral part heat insulation layer in a surrounding manner, a crucible arranged in the cavity, a lateral part heater arranged between the lateral part heat insulation layer and the crucible, and a top temperature measurement point arranged between the lateral part heat insulation layer and the crucible and above the lateral part heater, wherein the bottom heat insulation layer is in one layer, and a circle of middle part heat insulation layer is arranged towards the crucible in the middle of the lateral part heat insulation layer. With the application of the technical scheme of the invention, a layer of bottom heat insulation layer is removed through regulating a thermal field structure in the ingot furnace, a circle of heat insulation graphite hard felt is added on the inner wall of the lateral part heat insulation layer, a thermal field in the ingot furnace is divided into a top high-temperature area and a bottom low-temperature area to guarantee that a seed crystal does not melt in the crucible, the silicon liquid is crystallized and grown in the arrangement direction of atoms in the seed crystal in a crystallizing segment, the pseudo-single crystal silicon ingot is casted, and the batch popularization of a pseudo-single crystal is facilitated.

Description

technical field [0001] The invention relates to the field of quasi-single crystal silicon manufacturing, in particular to an ingot casting furnace for producing quasi-single crystal silicon ingots and an ingot casting method for quasi-single crystal silicon ingots. Background technique [0002] At present, the photovoltaic industry is developing rapidly. As a substitute for polycrystalline ingots, quasi-single crystal has great advantages in the photoelectric conversion efficiency of photovoltaic cells, and has become a popular product in the photovoltaic industry. [0003] Among them, the grain refers to the growth process of the crystalline substance, due to the limitation of the external space, it fails to develop into a crystal with a regular shape, but only crystallizes into a granular shape, that is, a monomer with the same crystal direction, called a grain. Quasi-single crystal, also known as quasi-single crystal, forms crystalline silicon material by ingot casting. O...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B11/00C30B29/06
Inventor 潘家明何广川陈艳涛
Owner YINGLI GRP