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Ingot casting furnace for producing quasi-single crystal silicon ingot and ingot casting method for quasi-single crystal silicon ingot

A technology similar to single crystal silicon and ingot furnace, which is applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., to achieve the effect of facilitating mass promotion

Active Publication Date: 2015-12-30
YINGLI GRP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0017] The present invention aims to provide an ingot furnace for producing quasi-single crystal silicon ingots and a quasi-single crystal ingot casting method to solve the problem of facilitating the mass promotion of quasi-single crystals

Method used

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  • Ingot casting furnace for producing quasi-single crystal silicon ingot and ingot casting method for quasi-single crystal silicon ingot
  • Ingot casting furnace for producing quasi-single crystal silicon ingot and ingot casting method for quasi-single crystal silicon ingot
  • Ingot casting furnace for producing quasi-single crystal silicon ingot and ingot casting method for quasi-single crystal silicon ingot

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] In the middle of the side heat insulation layer 80, a circle of graphite hard felt is set toward the crucible 50, the thickness of the graphite hard felt is 70mm, the width is 30mm, and the distance from the side heater 70 is 160mm.

[0048] The first step: 120 minutes, maintain the top temperature measuring point temperature of 1185 ℃, the surface impurities of the silicon material are volatilized and discharged through the vacuum pump of the ingot furnace to ensure the purity of the silicon material, and the height of the side insulation layer 80 is zero.

[0049] The second step: 270 minutes, the temperature of the inner top temperature measurement point quickly rises to 1510 ℃, and the side insulation layer 80 position is zero.

[0050] The third step: 45 minutes, the temperature of the inner top temperature measurement point slowly rises to 1530°C, and the side insulation layer 80 position is zero.

[0051] The fourth step: 230 minutes, keep the final state of the third ste...

Embodiment 2

[0056] In the middle of the side heat insulation layer 80, a circle of graphite hard felt is set toward the crucible 50, the thickness of the graphite hard felt is 10mm, the width is 30mm, and the distance from the side heater 70 is 350mm.

[0057] The first step: for 90 minutes, maintain the top temperature measuring point temperature of 1135℃, and the impurities on the surface of the silicon material will volatilize and be discharged through the vacuum pump of the ingot furnace to ensure the purity of the silicon material. The height of the side insulation layer 80 is zero.

[0058] The second step: 210 minutes, the temperature of the inner top temperature measurement point quickly rises to 1490 ℃, and the position of the side insulation layer 80 is zero.

[0059] The third step: 15 minutes, the temperature of the inner top temperature measuring point slowly rises to 1520℃, and the position of the side insulation layer 80 is zero.

[0060] The fourth step: 170 minutes, keep the final...

Embodiment 3

[0065] In the middle of the side heat insulation layer 80, a circle of graphite hard felt is set toward the crucible 50, the thickness of the graphite hard felt is 50mm, the width is 95mm, and the distance from the side heater 70 is 200mm.

[0066] The first step: 120 minutes, maintain the top temperature measuring point temperature of 1160 ℃, the surface impurities of the silicon material are volatilized, and are discharged through the vacuum pump of the ingot furnace to ensure the purity of the silicon material. The height of the side insulation layer 80 is zero.

[0067] The second step: 255 minutes, the temperature of the inner top temperature measuring point quickly rises to 1505℃, and the position of the side insulation layer 80 is zero.

[0068] The third step: 40 minutes, the temperature of the inner top temperature measurement point slowly rises to 1530 ℃, and the side insulation layer 80 position is zero.

[0069] The fourth step: 215 minutes, maintaining the final state of t...

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Abstract

The invention discloses an ingot furnace for producing a pseudo-single crystal silicon ingot and an ingot casting method for the pseudo-single crystal silicon ingot. The ingot furnace comprises a lateral part heat insulation layer, a bottom heat insulation layer forming a cavity together with the lateral part heat insulation layer in a surrounding manner, a crucible arranged in the cavity, a lateral part heater arranged between the lateral part heat insulation layer and the crucible, and a top temperature measurement point arranged between the lateral part heat insulation layer and the crucible and above the lateral part heater, wherein the bottom heat insulation layer is in one layer, and a circle of middle part heat insulation layer is arranged towards the crucible in the middle of the lateral part heat insulation layer. With the application of the technical scheme of the invention, a layer of bottom heat insulation layer is removed through regulating a thermal field structure in the ingot furnace, a circle of heat insulation graphite hard felt is added on the inner wall of the lateral part heat insulation layer, a thermal field in the ingot furnace is divided into a top high-temperature area and a bottom low-temperature area to guarantee that a seed crystal does not melt in the crucible, the silicon liquid is crystallized and grown in the arrangement direction of atoms in the seed crystal in a crystallizing segment, the pseudo-single crystal silicon ingot is casted, and the batch popularization of a pseudo-single crystal is facilitated.

Description

Technical field [0001] The present invention relates to the field of manufacturing similar single crystal silicon, in particular to an ingot furnace for producing similar single crystal silicon ingots and an ingot casting method of similar single crystal silicon ingots. Background technique [0002] At present, the photovoltaic industry is developing rapidly. As a substitute for polycrystalline ingots, monocrystalline crystal has a great advantage in photovoltaic cell photoelectric conversion efficiency, and it has become a popular product in the photovoltaic industry. [0003] Among them, the crystal grain refers to the crystal material that cannot develop into a regular morphology crystal due to the limitation of the external space during the growth process, but only crystallizes into a granular shape, that is, a monomer with the same crystal orientation, which is called a crystal grain. Quasi-single crystal, also known as quasi-single crystal, is formed by casting ingots to form...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B11/00C30B29/06
Inventor 潘家明何广川陈艳涛
Owner YINGLI GRP