A fast recovery diode and its manufacturing method

A technique for recovering diodes and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., which can solve problems such as hidden circuit failure, slow recovery speed, and device characteristic degradation, and reduce the amount of hole injection in the P region , The effect of reducing the number of injected holes and reducing the surface concentration
CN103618006BActive Publication Date: 2017-02-01STATE GRID CORP OF CHINA +2
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
STATE GRID CORP OF CHINA
Publication Date
2017-02-01

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Abstract

The invention relates to a power semiconductor device and a manufacturing method thereof and specifically to a fast recovery diode and a manufacturing method thereof. A junction pushing is performed in an active region in order to form a P+ region and a P region. A junction forming process comprises: firstly performing boron injection in order to push a junction one to ten [mu]m; secondly performing phosphorus compensative injection, wherein a phosphorus injection condition requires that the amount of injected phosphorus only decreases the concentration of the P region close to the silicon surface but not reverses a junction; and performing active region compensative injection to form the P region with low surface concentration. Therefore, the amount of hole injection of the P region in forward conduction is decreased while the concentration on the two sides of a PN junction is guaranteed. When minority carrier lifetime control is used, excessive recombination centers are not required to be generated. Therefore, a series of parameters are optimized. The fast recovery diode and the manufacturing method thereof perform phosphorus compensative injection on the P region so as to achieve the decrease in the surface concentration of the P region. Therefore, the decrease in the number of the hole injection in forward conduction is actually achieved.
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Description

technical field

[0001] The invention relates to a power semiconductor device and a manufacturing method thereof, in particular to a fast recovery diode and a manufacturing method thereof. Background technique

[0002] When a PIN diode conducts forward current, it generally injects a large number of carriers from the anode (P region) and cathode (N+ region) to the drift region (I region), and the hole carriers injected from the anode form a minority in the drift region. store charge in the form of . The minority carrier injection causes the conductance modulation effect in the drift region, thereby reducing the forward on-state voltage drop, which is the biggest advantage of both PIN diodes and bipolar devices. When a reverse voltage is suddenly applied to the conducting diode, the device will not be turned off immediately because a large number of minority carriers are stored in the drift region during conduction. Only when these minority carriers are completely extracted ...

Claims

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