Neutralizing salt for polishing liquid, polishing liquid for electronic material, polishing method, and manufacturing method of electronic material

A technology of electronic materials and manufacturing methods, applied in chemical instruments and methods, polishing compositions containing abrasives, manufacturing tools, etc., can solve problems such as hindering high capacity of magnetic disks, poor adhesion, etc., and achieve the continuity of grinding speed Excellent, adhesion reduction, surface defect reduction effect

Inactive Publication Date: 2015-09-30
SANYO CHEM IND LTD
View PDF16 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Scratches generated on the substrate will cause poor adhesion between the magnetic film and the substrate in the subsequent dielectric process, for example, and will become a factor that hinders the high capacity of the magnetic disk

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Neutralizing salt for polishing liquid, polishing liquid for electronic material, polishing method, and manufacturing method of electronic material
  • Neutralizing salt for polishing liquid, polishing liquid for electronic material, polishing method, and manufacturing method of electronic material
  • Neutralizing salt for polishing liquid, polishing liquid for electronic material, polishing method, and manufacturing method of electronic material

Examples

Experimental program
Comparison scheme
Effect test

manufacture example 1

[0212] Production example 1 (manufacture of polyacrylic acid DBU salt)

[0213] 300 parts of isopropanol and 100 parts of ultrapure water were put into the reaction container whose temperature adjustment and stirring were possible, and after replacing the inside of the reaction container with nitrogen gas, it heated up to 75 degreeC. While stirring at 30 rpm, 407 parts of a 75% aqueous solution of acrylic acid and 95 parts of a 15% isopropanol solution of dimethyl 2,2'-azobisisobutyrate were simultaneously added dropwise over 3.5 hours.

[0214] After completion of the dropwise addition, after stirring at 75° C. for 5 hours, ultrapure water was intermittently added to prevent solidification in the system, and the mixture of water and isopropanol was distilled off until isopropanol could not be detected. The resulting polyacrylic acid aqueous solution was neutralized to pH 7.0 with 450 parts of DBU, and the concentration was adjusted with ultrapure water to obtain a 40% aqueous...

manufacture example 2

[0216] Production example 2 (manufacture of naphthalenesulfonic acid formaldehyde condensate DBU salt)

[0217] 21 parts of naphthalenesulfonic acid and 10 parts of ultrapure water were put into a stirred reaction vessel, and 8 parts of 37% formaldehyde were added dropwise over 3 hours while stirring to keep the temperature in the system at 80°C. After the dropwise addition, the temperature was raised to 105°C. After reacting for 25 hours, it was cooled to room temperature (about 25°C), adjusted to 25°C in a water bath while adding DBU slowly, and the pH was adjusted to 6.5 (using about 15 parts of DBU). Ultrapure water was added to adjust the solid content to 40%, thereby obtaining a 40% aqueous solution of DBU salt (AB-2) of a naphthalenesulfonic acid formaldehyde condensate as an anionic surfactant. In addition, Mw of the DBU salt of (AB-2) was 5,000.

manufacture example 3

[0218] Production example 3 (manufacture of polystyrene sulfonate guanidine salt)

[0219]100 parts of dichloroethane was charged into a temperature-adjustable and refluxed stirred reaction vessel, and nitrogen substitution was carried out under stirring. After that, the temperature was raised to 90° C., and dichloroethane was refluxed. Add 120 parts of styrene and 1.7 parts of 2,2'-azobisisobutyronitrile dissolved in 20 parts of dichloroethane in advance into the reaction container dropwise over 6 hours. After further polymerization for 1 hour. After the polymerization, it was cooled to 20° C. under a nitrogen seal, and then 105 parts of anhydrous sulfuric acid was added dropwise over 10 hours while controlling the temperature at 20° C. After the dropwise addition, sulfonation reaction was further performed for 3 hours. After the reaction, the solvent was distilled off to solidify, and then 345 parts of ultrapure water was injected and dissolved to obtain a polystyrenesulfon...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
particle sizeaaaaaaaaaa
particle sizeaaaaaaaaaa
Login to view more

Abstract

This invention comprises: a specific neutral salt (AB) used in a step for polishing an electronic material intermediary using a polishing pad; an electronic material polishing liquid containing said neutral salt (AB); a polishing method for polishing an electronic material intermediary using said electronic material polishing liquid; and a manufacturing method of an electronic material involving a step for polishing an electronic material intermediary with said polishing method. Here, the neutral salt (AB) is a salt of (A) an acidic compound having at least one acid radical (X) in the molecule, and (B) a nitrogen-containing basic compound having a 10-152 kcal / mol heat of formation change (Q2) in protonation reactions, wherein said neutral salt has a 3-200 kcal / mol heat of formation change (Q1) in acid dissociation reactions of the aforementioned acid radical (X). Thus provided is a material which, compared to conventional polishing liquids, results in fewer substrate defects such as scratches, which further, in a subsequent washing step, facilitates removal of polishing debris, and which further makes it possible to sustain polishing speed in the polishing step.

Description

technical field [0001] The present invention relates to a neutralization salt used in a grinding process, a polishing solution for electronic materials containing the neutralization salt, a grinding method for grinding an electronic material intermediate using the grinding solution for electronic materials, and a grinding method comprising using the grinding method. The electronic material manufacturing method of the electronic material intermediate process. [0002] In more detail, the present invention relates to a neutralization salt, which is used in a grinding process in an electronic material manufacturing process. Compared with the past, the continuity of the grinding speed is good and the surface quality of the electronic material is improved. The present invention also relates to A polishing liquid for electronic materials containing the neutralizing salt, a polishing method for polishing an intermediate electronic material using the polishing liquid for electronic ma...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C09K3/14B24B37/00H01L21/304
CPCC09G1/02B24B37/044H01L21/30625
Inventor 山口俊一郎
Owner SANYO CHEM IND LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap