Adjustable latch resisting single event upset and transient effect delay

Abstract

The invention discloses an adjustable latch resisting single event upset and transient effect delay. The latch comprises a first delay unit, a second delay unit, a first latch unit, a second latch unit, and a third latch unit. Through adjusting bias voltage of the delay units, delay of the first delay unit and the second delay unit can be respectively changed, so as to change establishing time of data signals of the latch, and effectively reduce and even prevent wrong data latching caused by single-particle transient effect in an input data signal passage. Through arranging a redundant storage node, voltage of a node can be recovered through the other two nodes by feedback when the node upsets. To sum up, the adjustable latch can realize single event upset resistance under an ordinary commercial process, and latch establishing time can be changed through the adjustable delay units, so that the transient effect on data paths is effectively restrained.

Description

technical field [0001] The invention belongs to the field of integrated circuit design reinforcement, in particular to a high-performance latch capable of effectively preventing single-event reversal and transient effects. Background technique [0002] With the development of space technology, nuclear technology and strategic weapons, various electronic devices have been widely used in artificial satellites, spacecraft, launch vehicles, long-range missiles and nuclear weapon control systems. Electronic components that make up electronic equipment are inevitably exposed to radiation environments. Due to the rapid development of semiconductor technology, the integration of semiconductor devices used in spacecraft continues to increase, the feature size is getting smaller and smaller, and the operating voltage is getting lower and lower. Correspondingly, The critical charge is also getting smaller and smaller, and single event effects are more and more likely to occur. As the ...

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Problems solved by technology

Under the same conditions, the structure of Whit has a large static current; the structure of Liu has a large number of tubes, the connection relationship is complicated, and the area cost is large; the structure of Haddad has many sensitive nodes, which are easy to flip and not easy to repair

[0006] Among the current commonly used anti-radiation hardening schemes, process hardening can effectively reduce the charge collection on the single particle trajectory, but the cost is expensive, there are few process lines to choose from, and the integration is usually three generations behind the commercial process; among various design hardening schemes , some flipping is not easy to recover or the flipping recovery time is long, some area costs are large, some static current is large, and the above-mentioned various reinforcement structures do not have the ability to resist single event transient effects

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