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Vertical-pull method for silicon single crystal rod and prepared silicon single crystal rod employing same

A single crystal silicon rod and shoulder technology, applied in the field of solar cells, can solve the problem of high oxygen content at the head of the single crystal silicon rod

Active Publication Date: 2014-03-26
YINGLI GRP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention aims to provide a single crystal silicon rod Czochralski method and the prepared single crystal silicon rod to solve the problem of high oxygen content in the head of the single crystal silicon rod in the prior art

Method used

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  • Vertical-pull method for silicon single crystal rod and prepared silicon single crystal rod employing same
  • Vertical-pull method for silicon single crystal rod and prepared silicon single crystal rod employing same
  • Vertical-pull method for silicon single crystal rod and prepared silicon single crystal rod employing same

Examples

Experimental program
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Effect test

Embodiment 1

[0032] Set the diameter of the isodiametric portion to 206mm, and the silicon material feeding amount to 130kg, adopt the following process to carry out CZ pull of N-type single crystal silicon rods to form N-type single crystal silicon rods.

[0033] Among them, the shoulder growth process is as follows: the pulling speed is 0.7mm / min, the crucible rotation speed is 8rpm, the crystal rotation speed is 8rpm, the argon gas flow rate is 30slpm, and the pressure is 15Torr;

[0034]

[0035] The equal-diameter growth process is as follows: the crucible rotation speed is 5 rpm, the casting speed is 1.0 mm / min, the crystal rotation speed is 8 rpm, the argon gas flow rate is 30 slpm, and the pressure is 15 Torr.

Embodiment 2

[0037] Set the diameter of the isodiametric portion to 206mm, and the silicon material feeding amount to 130kg, adopt the following process to carry out CZ pull of N-type single crystal silicon rods to form N-type single crystal silicon rods.

[0038] Among them, the shoulder growth process is as follows: the pulling speed is 0.7mm / min, the crucible rotation speed is 8rpm, the crystal rotation speed is 8rpm, the argon gas flow rate is 30slpm, and the pressure is 15Torr;

[0039]

[0040] The equal-diameter growth process is as follows: the crucible rotation speed is 3 rpm, the casting speed is 1.0 mm / min, the crystal rotation speed is 8 rpm, the argon gas flow rate is 30 slpm, and the pressure is 15 Torr.

Embodiment 3

[0042] Set the diameter of the isodiametric portion to 206mm, and the silicon material feeding amount to 130kg, adopt the following process to carry out CZ pull of N-type single crystal silicon rods to form N-type single crystal silicon rods.

[0043] Among them, the shoulder growth process is as follows: the pulling speed is 0.6mm / min, the crucible rotation speed is 10rpm, the crystal rotation speed is 8rpm, the argon gas flow rate is 40slpm, and the pressure is 20Torr;

[0044]

[0045] The equal-diameter growth process is as follows: the crucible rotation speed is 5 rpm, the pulling speed is 1.4 mm / min, the crystal rotation speed is 10 rpm, the argon gas flow rate is 40 slpm, and the pressure is 20 Torr.

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Abstract

The invention discloses a vertical-pull method for a silicon single crystal rod and a prepared silicon single crystal rod employing the same. The vertical-pull preparation method for the silicon single crystal rod comprises the steps of shoulder-expanding growth and a constant diameter growth, wherein the diameter expanding growth comprises the steps as follows: forming a first shoulder during a first shoulder-expanding growth; forming a second shoulder during a constant diameter growth along the lower end of the first shoulder; forming a third shoulder during a second shoulder-expanding growth along the lower end of the second shoulder. According to the method provided by the invention, the formed silicon single crystal rod shoulder is higher under the same silicon material consumption of the shoulder, therefore the temperature difference is relatively larger between the growth interface center in a prime phase of the constant diameter growth and the shoulders, the temperature gradient of the shoulders in the axial direction is even larger, therefore the heat dissipation of the heat conduction in the center of the growth interface is facilitated, and the concavity of the growth interface is reduced, as a result, the reduction of heat convection on the growth interface is facilitated due to the weakened concavity, the rotary speed of the crucible furnace during the constant-diameter growth is reduced and the pulling rate of the crucible furnace during the constant-diameter growth is increased, further, the oxygen content of the head of the silicon single crystal rod is reduced.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a single crystal silicon rod Czochralski method and the prepared single crystal silicon rod. Background technique [0002] With the continuous development of the photovoltaic industry, the demand for high-efficiency solar cells is gradually increasing, and higher requirements are placed on the quality of the monocrystalline silicon rods used as the substrate. At present, the preparation method of monocrystalline silicon ingots is mainly monocrystalline silicon ingot Czochralski method, and its main process steps include feeding, evacuating, melting, stabilizing, seeding, necking, shouldering, equal diameter, finishing and cooling. Single crystal silicon rods formed by Czochralski figure 1 As shown, it includes a narrow neck 10', a shoulder 20', an isometric portion 30' and a tail 40'. [0003] In the early stage of the growth of single crystal silicon rods (within 200mm below the sho...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/20C30B29/06
Inventor 乔松
Owner YINGLI GRP