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Vacuum far-zone plasma processing device

A plasma and processing device technology, which is applied in the field of plasma processing devices, can solve the problems of non-insulating materials destroying the internal body material properties of the material, material area limitation, etc.

Inactive Publication Date: 2014-03-26
SUZHOU OPS PLASMA TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the prior art, materials are placed in an electric field for activation treatment, but for non-insulating materials, they are easily affected by the electric field in the electric field, making their conduction and destroying the performance of the bulk material inside the material. On the other hand, the space affected by the electric field Regional restrictions There are also certain restrictions on the area of ​​the material

Method used

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  • Vacuum far-zone plasma processing device
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Experimental program
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Effect test

Embodiment 1

[0019] Such as figure 1 As shown, as the first preferred embodiment, this embodiment provides a vacuum remote plasma processing device, including a reaction chamber, an electrode assembly 3, a plasma generator (not shown in the figure) and negative pressure equipment, and the reaction chamber includes The discharge chamber 4 and the treatment chamber 2 for material surface activation reaction, the discharge chamber 4 is arranged above the treatment chamber 2 and communicated with the treatment chamber 2, the top of the discharge chamber 4 is provided with a gas inlet 5, and the bottom of the treatment chamber 2 is provided with a gas outlet 1 , the electrode assembly 3 is a pair of symmetrical ring-shaped electrodes, the electrode assembly 3 is arranged on the outer surface of the discharge chamber 4, the plasma generator is electrically connected to the electrode assembly 3, and the negative pressure device is connected to the gas outlet 1.

[0020] In this embodiment, the ma...

Embodiment 2

[0022] Such as figure 2 As shown, as the second preferred embodiment, the rest is the same as Embodiment 1, the difference is that the electrode assembly 3 provided by this embodiment is a three-dimensional spiral electrode, and the plasma generator includes a power supply 7 for adjusting the power of the electrode assembly 3 And the matcher 6 connected with the power supply 7, the matcher 6 is also electrically connected with the electrode assembly 3, the negative pressure device is a vacuum pump 9, and a filter 8 is also arranged between the vacuum pump 9 and the gas outlet 1.

[0023] In this embodiment, the electrode assembly 3 is a three-dimensional spiral electrode to generate a large space for the electric field, and the power supply 7 can adjust the electric field strength according to the needs, so as to achieve different treatment effects.

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Abstract

The invention relates to a vacuum far-zone plasma processing device. The vacuum far-zone plasma processing device comprises a reaction cavity, an electrode assembly, a plasma generator and a negative pressure device, and the reaction cavity comprises a discharging cavity and a processing cavity where the activating reaction of the surfaces of materials can be carried out, wherein the discharging cavity is arranged above the processing cavity and communicated with the processing cavity, a gas inlet is formed in the top of the discharging cavity, a gas outlet is formed in the bottom of the processing cavity, the electrode assembly is arranged on the outer surface of the discharging cavity, the plasma generator is electrically connected with the electrode assembly, and the negative pressure device is connected with the gas outlet. According to the vacuum far-zone plasma processing device, the discharging cavity and the processing cavity are vacuumized by the negative pressure device, the electrode assembly is driven by the plasma generator to generate an electric field, and reaction gas enters the reaction cavity through the gas inlet, is ionized by the discharging cavity and then enters the processing cavity to carry out the activating reaction on the surfaces of the materials; the materials are far from the electric field environment, the vacuum far-zone plasma processing device is suitable for insulating materials as well as non-insulating materials and can meet the demand for processing various materials, the processing cavity is not limited by the space of the discharging cavity and can meet the demand for processing materials with different areas, and therefore the vacuum far-zone plasma processing device is more convenient to use.

Description

technical field [0001] The invention belongs to the field of plasma processing devices, and in particular relates to a vacuum remote plasma processing device. Background technique [0002] Plasma is an ionized gas-like substance composed of atoms deprived of some electrons and positive and negative electrons generated after atoms are ionized. It exists widely in the universe and is often regarded as a substance other than solid, liquid, and gas. The fourth state of existence. [0003] At present, plasma devices generally set two electrodes in a sealed container to form an electric field, and use a vacuum pump to achieve a certain degree of vacuum. As the gas becomes thinner, the distance between molecules and the free movement distance of molecules or ions becomes longer and longer. Under the action of an electric field, they collide to form ions. These ions are highly active and their energy is enough to destroy almost all chemical bonds and cause chemical reactions on any...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32
Inventor 沈文凯王红卫
Owner SUZHOU OPS PLASMA TECH