Pre-cutting a back side of a silicon substrate for growing better III-V group compound layer on a front side of the substrate

Abstract

The present disclosure involves an apparatus. The apparatus includes a substrate having a front side a back side opposite the front side. The substrate includes a plurality of openings formed from the back side of the substrate. The openings collectively define a pattern on the back side of the substrate from a planar view. In some embodiments, the substrate is a silicon substrate or a silicon carbide substrate. Portions of the silicon substrate vertically aligned with the openings have vertical dimensions that vary from about 100 microns to about 300 microns. A III-V group compound layer is formed over the front side of the silicon substrate. The III-V group compound layer is a component of one of: a light-emitting diode (LED), a laser diode (LD), and a high-electron mobility transistor (HEMT). The invention also provides pre-cutting a back side of a silicon substrate for growing a better III-V group compound layer on a front side of the substrate.

Description

technical field [0001] The present invention relates generally to III-V compound devices and, more particularly, to improving III-V compound layers grown on substrates. Background technique [0002] In recent years, the semiconductor industry has experienced rapid growth. Technological improvements in semiconductor materials and design have produced various types of devices for different purposes. Some types of these devices fabricated may require the formation of one or more III-V compound layers on a substrate, eg, gallium nitride, on the substrate. Devices using III-V compounds may include light emitting diode (LED) devices, laser diode (LD) devices, radio frequency (RF) devices, high electron mobility transistor (HEMT) devices, and / or high power semiconductor devices. [0003] Traditionally, fabricators have formed III-V compound layers on sapphire substrates. However, sapphire substrates are very expensive. Accordingly, some manufacturers have attempted to form III-...

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Problems solved by technology

However, existing methods of forming III-V compound layers on silicon substrates can lead to wafer defects such as , cracking defects) or produce low-quality III-V compound layers

[0004] Thus, while existing methods of forming III-V compound layers on silicon substrates have generally been adequate for their intended purposes, they have not been completely satisfactory in every respect

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