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High-stability energy gap reference current circuit structure

A technology of energy gap reference and current circuit, which is applied in the direction of adjusting electrical variables, control/regulation systems, instruments, etc., and can solve the problems of large power consumption of the circuit and large slope of the energy gap current reference curve.

Active Publication Date: 2014-04-02
CRM ICBG (WUXI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

from image 3 It can be seen that the power supply scans from 0 to 10V, and the normal operating voltage of the circuit is in the range of 6.5 to 9.5V. According to the existing simulation model (NPN model qvn2d2x2d2ba), the slope of the energy gap current reference curve is too large, so that the overall quiescent current increases with the voltage And the rise is too fast, resulting in excessive power consumption in the normal operation of the overall circuit

Method used

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  • High-stability energy gap reference current circuit structure
  • High-stability energy gap reference current circuit structure
  • High-stability energy gap reference current circuit structure

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Embodiment Construction

[0026] In order to understand the technical content of the present invention more clearly, the following examples are given in detail.

[0027] see Figure 4 Shown is the circuit diagram of the structure of the bandgap reference current circuit with high stability of the present invention.

[0028] In one embodiment, the bandgap reference current circuit structure with high stability includes a first NPN transistor Q1 and a second NPN transistor Q2 forming a mirror constant current source, and the first NPN transistor Q1 and the second NPN transistor Q1 are Transistor Q2 is the same triode element. The base of the first NPN transistor Q1 is connected to the base of the second NPN transistor Q2, and the base of the first NPN transistor Q1 is also connected to the collector of the first NPN transistor Q1. The collector of an NPN transistor Q1 is connected to the power supply, the emitters of the first NPN transistor Q1 and the second NPN transistor Q2 are both grounded, the co...

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Abstract

The invention relates to a high-stability energy gap reference current circuit structure, which comprises a first negative-positive-negative (NPN) triode and a second NPN triode which form a mirror image constant current source. The resistance value of collector resistors Rc of the first and second NPN triodes is 90 to 110 times resistance value Rcb between a collector and a base, so that the collector resistors Rc of the NPN triodes is effectively reduced on the premise that the basic circuit structure and technological conditions are not changed; therefore, the influence of saturation voltage drop of the NPN triodes can be reduced, and the stability of energy gap reference current is guaranteed; moreover, the high-stability energy gap reference current circuit structure is simple, low in cost and wide in application range.

Description

technical field [0001] The invention relates to the technical field of circuit structure, in particular to the technical field of energy gap reference current circuit structure, and specifically refers to a high stability energy gap reference current circuit structure. Background technique [0002] The schematic diagram of the energy gap reference current generation circuit in the prior art, such as figure 1 As shown, the derivation process is as follows: [0003] ∵I Q11294 =I Q11293 I = I S × ( e U BE U T - 1 ) ≈ I S × e U BE U T ...

Claims

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Application Information

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IPC IPC(8): G05F3/26
Inventor 袁巍黄历朝刘冰张勤
Owner CRM ICBG (WUXI) CO LTD