Smart tap
A tap, intelligent technology, applied in the direction of connections, parts of connecting devices, coupling devices, etc.
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Embodiment 1
[0330] (Example 1 and Comparative Example)
[0331] As in the comparative example, the triac (TA) was 100 mΩ, the on-resistance was high, and the heat generation of TA itself was high, so the heat generation value was as high as 23.3W. Therefore, the actual measurement temperature is also 200° C. or higher, and it is heated to a temperature that cannot be actually measured and cannot be tolerated in practical use.
[0332] On the other hand, if MOSFET-1 is used instead of TA, the on-resistance is as low as 10.7mΩ, so the calorific value is significantly lower than that of TA, which is 0.6W, and the actual measurement temperature is 65°C, so it can be confirmed that there will be no It will adversely affect the life of the microcomputer control and communication control unit.
[0333] If MOSFET-2 is used, the on-resistance is 38mΩ, which is higher than that of MOSFET-1, so the heat generation value is also higher at 2.1W. As a result, the actual measured temperature exceeds 1...
Embodiment 2
[0337] MOSFET-1 in Example 1 was used. In this Example 2, it was found that the change in the calorific value affects the life of the microcomputer control unit and the like. From the viewpoint of safety, it is desirable that the temperature outside the insertion opening of the power plug is less than 85°C. In addition, in order not to deteriorate the microcomputer control unit, the temperature needs to be lower than 80°C. As for the communication unit, it is desirable that the temperature is lower than 70°C due to the crystal oscillator.
[0338] From the results of Example 2, it can be seen that the heat generated by the MOSFET alone is 1.0 W, but it is necessary to prevent deterioration of the microcomputer control unit and the communication unit.
[0339] [Table 6]
[0340]
Embodiment 3
[0342] Using MOSFET-2 in Example 1, in Figure 6 In the arrangement of the structure shown, MOSFETs were mounted in parallel connection and the heat generation temperature at the time of the socket structure was actually measured.
[0343] A structure in which two MOSFET-2s are connected in parallel is used. Therefore, for example, when 10 A is turned on and there are two MOSFETs-2, a current of 5 A flows through each MOSFET.
[0344] In the actual socket structure shown in Table 7 below, based on the results of actually measuring the heat generation temperature of the MOSFET, it can be seen that if the heat generation value of the MOSFET is 1W or less, the actual measurement temperature is 80°C or less. It was also confirmed that if the heat generation value of the MOSFET is 0.6W or less, the heat generation value can be reduced to 70°C or less, so it can be understood that the heat generation value of the MOSFET should be 0.6W or less in order to prevent heating of the comm...
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