A method for controlling oxygen content in a silicon wafer carrying area of ​​a semiconductor device

A technology of a bearing area and a control method, applied in the field of control devices for realizing the method, can solve the problems of shortening the control target time, easy aging of the actuator, reducing frequent actions, etc., achieving good comprehensive effects, avoiding frequent actions, and simple operation. Effect

Active Publication Date: 2017-08-22
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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Problems solved by technology

[0009] The purpose of the present invention is to overcome the shortcomings of the prior art, such as long time to achieve the oxygen content control target, repeated control process, and easy aging of the actuator, and provide a new method for controlling the oxygen content of the silicon wafer carrying area. Phased control, combining preset fast nitrogen blowing with PID control slow nitrogen blowing, and intervening in the flow rate calculated by PID, shortens the time to achieve the control target, avoids the adverse effects caused by pressure fluctuations, and reduces Reduce the frequent action of the actuator and prolong the service life

Method used

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  • A method for controlling oxygen content in a silicon wafer carrying area of ​​a semiconductor device

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Embodiment Construction

[0022] The specific implementation manner of the present invention will be described in further detail below in conjunction with the accompanying drawings.

[0023] In this example, see figure 1 , figure 1 It is a control flowchart of the oxygen content control method of the present invention. As shown in the left column of the figure, when the present invention controls the oxygen content in the silicon wafer bearing area of ​​the semiconductor diffusion equipment, a staged method is adopted in the control process, and the rapid nitrogen blowing is preset first, and when the oxygen content is lower than a certain value , and then switch to PID control mode to blow nitrogen slowly. Specifically divided into two steps:

[0024] The first step is to enter the stage of rapid nitrogen blowing. At the beginning of the control, start the control system, close the rapid replacement air valve, open the exhaust valve, the straight-through intake valve and the intake valve with MFC,...

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Abstract

The invention discloses a method and a control device for controlling the oxygen content in the silicon wafer bearing area of ​​semiconductor equipment. The oxygen content control target is achieved by controlling the flow rate of nitrogen blown in stages. When the control starts, the silicon wafer bearing area is quickly controlled. Blow in nitrogen for gas replacement; when the oxygen content is lower than the set value, switch to the PID control mode, set the flow value with the calculated value of PID control, slowly blow nitrogen into the silicon wafer loading area, and control the oxygen content until target value. The invention controls the opening and closing combination of the rapid replacement air valve, the exhaust valve, the straight-through intake valve and the intake valve with MFC through the control module, so as to ensure that the pressure of the silicon wafer bearing area is stable within the target range, and the implementation is simple and resource saving , a good overall effect was obtained.

Description

technical field [0001] The present invention relates to a method for controlling gas content, more particularly, to a method for controlling oxygen content in a silicon wafer carrying area of ​​semiconductor diffusion equipment, and a control device for realizing the method. Background technique [0002] Semiconductor diffusion equipment is an important process equipment for integrated circuit manufacturing. As an automatic control equipment that requires continuous work for a long time and has excellent temperature control accuracy, good reliability and stability, it is used in the process of integrated circuit manufacturing. Various oxidation, annealing and film growth processes. [0003] A process result of diffusion equipment, that is, the uniformity of the diffusion layer on the surface of semiconductor silicon wafers, is the core index of diffusion equipment. After the silicon wafer has been processed, it is carried out in a relatively sealed silicon wafer carrying ar...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G05D11/13
Inventor 慕晓航张海轮王凯
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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