Method and device for silicon carbide wafer etching

Abstract

The invention provides a corrosion method and device for silicon carbide wafers and mainly provides a brand new mixed corrosive agent and a brand new corrosion device, wherein the adopted mixed corrosive agent is composed of three components including KOH, NaOH and villiaumite, and the adopted corrosion device is used for realizing simultaneous corrosion operation for a plurality of wafers through a brand new wafer bearing device. According to the improvement, the technical scheme has the advantages that the plurality of wafers are simultaneously corroded, the utilization ratios of energy and the corrosive agent are increased, more precise control for corrosion time and corrosion temperature is realized, the safety of the whole device is improved, and the actual corrosion speed is increased.

Description

technical field [0001] The invention belongs to the field of crystal processing of new materials, and in particular relates to an etching method and device for a silicon carbide wafer. Background technique [0002] Silicon carbide (SiC) is known as one of the third-generation semiconductor materials after silicon (Si) and (GaAs). Due to its wide bandgap, high critical breakdown electric field, high thermal conductivity, radiation resistance, and corrosion resistance, it has broad application prospects in the fields of high-temperature, high-power, and high-frequency electronic devices, and has become the basis of the field of "extreme electronics". Material. It can be widely used in aerospace, nuclear power, mineral mining, chemical engineering, vehicle and ship manufacturing and other fields. [0003] Although silicon carbide materials have broad development prospects, they have also attracted extensive research interest. But further development and applications are limi...

AI Technical Summary

Problems solved by technology

At present, using molten alkali or salt as the etchant is the most commonly used method, among which KOH and the mixture of KOH and NaOH are the most widely used, but there are defects of poor corrosion ability and slow corrosion rate.

The currently used devices also have many shortcomings, such as only one wafer can be etched at a time, the utilization rate of energy and corrosive agents is low, the safety protection during the etching process is insufficient, and the corrosive agent on the surface of the sample cannot be removed in time when the etching is completed, etc.

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