Gallium oxide wafer surface treatment method

Abstract

The invention provides a gallium oxide wafer surface treatment method, which comprises the following steps of: using noble metal particles as a catalyst and a mixed solution of hydrofluoric acid, an oxidizing agent and a surfactant as a corrosive agent at room temperature through a noble metal auxiliary corrosion method, so that the surface of a gallium oxide wafer can be quickly dissolved by the corrosive agent; precious metal particles are subjected to local primary battery reaction on the surface of a gallium oxide wafer, the work function of precious metal is higher, when the precious metal is in contact with the surface of gallium oxide, a certain electric field exists in a space charge area, energy band bending is caused, potential difference exists between the surface and the interior of a semiconductor, and electrons are extracted from the crystal by a precious metal catalyst. Especially under the irradiation of an ultraviolet lamp, the formation of electrons and hole pairs on the surface of gallium oxide is accelerated, and the possibility of compounding of photo-induced electron and hole pairs is reduced by the escape of electrons, so that the hole accumulation region on the surface of gallium oxide is promoted to generate an oxidation reaction, oxygen is generated, an oxidizing agent in a solution is reduced, Ga ions are dissolved in hydrofluoric acid, and the corrosion process is completed. According to the processing method, the wafer damage layer caused by the machining process, the dry etching process and the like can be removed, the internal stress of the wafer is eliminated, and the uniform wafer meeting the roughness requirement of the subsequent process is manufactured.

Description

technical field [0001] The invention belongs to the technical field of semiconductor wafer manufacturing, and relates to a gallium oxide wafer, in particular to a gallium oxide wafer surface treatment method with low corrosion temperature, high corrosion efficiency, controllable corrosion rate and good stability. Background technique [0002] As a new generation of ultra-wide bandgap semiconductor material, gallium oxide has a bandgap width of 4.7-4.9eV, high breakdown electric field strength, large transmission range, high Baliga quality factor, low device power consumption, and stable physical and chemical properties. It has great application value in the fields of high-voltage and high-power electronic devices and solar-blind ultraviolet photoelectric devices, and is an important supplement to the third-generation wide-bandgap semiconductor materials represented by SiC and GaN. Gallium oxide has found six crystal phases and multiple crystal structures, and the consistent ...

AI Technical Summary

Problems solved by technology

[0005] In order to solve the problems in the existing corrosion technology of gallium oxide single crystal materials, the corrosion removal rate is lower than 100nm / h, the corrosion time is long, the efficiency is low, and the corrosion temperature is high. The present invention provides a surface treatment method for gallium oxide wafers. The processing method invented is to remove the damaged layer of the wafer caused by the machining process, dry etching process, etc., eliminate the internal stress of the wafer, and produce a uniform wafer that meets the roughness requirements of the subsequent process. The processing method of the present invention has a low corrosion temperature, High corrosion efficiency and good process control performance

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