Corrosive liquid for detecting layer damage layer after gallium oxide single crystal processing and detection method

Abstract

The invention discloses a corrosive liquid for detecting surface layer damage after gallium oxide single crystal processing and a corrosion method. The corrosive liquid comprises a sulfuric acid solution and a phosphoric acid solution, wherein the sulfuric acid solution accounts for 10%-30% by volume, and the concentration is not lower than 98%, and the phosphoric acid solution accounts for 70-90%, and the concentration is not lower than 85%. The detection method comprises the following steps: preparing the corrosive liquid which comprises the following components in percentage by volume: 10-30% of sulfuric acid solution with the concentration not less than 98%, and 70-90% of the phosphoric acid solution with the concentration not lower than 85%; heating the corrosive liquid: heating the prepared corrosive liquid to 80-95 DEG C; carrying out corrosion: putting the gallium oxide single crystal wafer into the liquid for corrosion, wherein the corrosion time is 1-6 minutes; carrying out cleaning: taking out the corroded gallium oxide single crystal wafer, and cleaning the gallium oxide single crystal wafer in deionized water; and carrying out detecting: detecting the sub-surface damage of the cleaned gallium oxide single crystal wafer. The corrosive liquid provided by the invention has very good selective corrosivity, the surface layer damage of the corroded gallium oxide single crystal is clearly displayed, the corrosion temperature is relatively low, and the rate is high.

Description

technical field [0001] The invention belongs to the field of ultra-precision processing and detection of hard and brittle crystal materials, and in particular relates to a corrosion solution and a detection method for detecting a damaged layer on the processed surface of gallium oxide single crystal. Background technique [0002] Gallium oxide (β-Ga 2 o 3 ) As a new gallium nitride (GaN) substrate material, it has low lattice mismatch, a forbidden band width of 4.8-4.9eV, a transmittance of more than 80% in the visible light band, and a minimum transmission wavelength of 260nm. It is an ideal GaN to replace sapphire. The substrate material has a broad market prospect. [0003] Whether it is used as a window in the field of optical communication or a substrate in the field of microelectronics, there are very high requirements on the quality of the processed surface layer of gallium oxide, and the quality of the surface layer of the wafer directly affects the performance of ...

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Problems solved by technology

[0005] In view of the above-mentioned deficiencies in the prior art, the purpose of the present invention is to provide a corrosion solution and a detection method for detecting the surface damage layer of gallium oxide single crystal processing, so as to solve the problem of the damage and corrosion of the surface layer of the gallium oxide wafer by the current etchant. There are problems such as slow corrosion speed, high service temperature, and poor repeatability of corrosion results.

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