39results about How to "Fast corrosion rate" patented technology

The invention discloses a MOS transistor and a manufacturing method therefor. In order to improve the carrier migration rate of the MOS transistor, the size of an opening of a bowl-shaped groove is controlled during the forming of a sigma-shaped groove, so as to enable the size of the opening to be greater than the distance between side walls of the adjacent grid structures. In other words, the size of the opening of the bowl-shaped groove is controlled to be great as much as possible, thereby enabling the size of the opening of the sigma-shaped groove formed by the corrosion of the bowl-shaped groove to be greater, enabling pressure stress materials or tensile stress materials placed in a source-drain region to be more, enabling the tensile stress or pressure stress applied to a trench to be greater, and enabling the carrier migration rate to be greater.

The invention provides a surface treated metal and a surface treatment method thereof and a metal resin complex and a preparation method of the metal resin complex. The surface treated metal comprises a metal body and an anodic oxidation film layer which is located on the surface of the metal body, the anodic oxidation film layer includes a barrier layer which is in contact with the metal body and a loose layer located on the outer surface of the barrier layer, the loose layer contains anodic oxidation film micropores, the pore diameter of the anodic oxidation film micropores is 10 nm-800 mum, the barrier layer contains barrier layer corrosion pores, the pore diameter of the barrier layer corrosion pores is 10 nm-800 mum, the metal body includes a corrosion layer which is in contact with the barrier layer, the corrosion layer contains metal corrosion pores, the pore diameter of the metal corrosion pores is 10 nm-1 mm, the metal is aluminum alloy or aluminum, the bonding force between the metal and resin is strong, and the surface treated metal is simple in process, is easy for large-scale production, and has no pollution.

The invention discloses a method for eliciting sub-micron HBT emitter / HEMT grid, comprising the following steps: a sacrificial dielectric layer is manufactured on manufactured sub-micron HBT emitter metal / HEMT grid metal; the HBT emitter metal / HEMT grid metal provided with the sacrificial dielectric layer is formed by peeling; the substrate is coated with smoothing material on the surface provided with the HBT emitter / HEMT grid, so as to smooth the surface of the substrate; the smoothing material is etched and the sacrificial dielectric layer is exposed; the sacrificial dielectric layer is removed and the metal which requires interconnect is exposed; and the metal are interconnected by photo-etching and evaporating after washing. The method can be adopted to improve reliability and stability of elicitation and reduce process complexity.

The invention discloses a transferring method of an edge-free vertical structure LED chip substrate. The transferring method of the edge-free vertical structure LED chip substrate comprises a metal layer depositing step, an epitaxial wafer surface treatment step, a substrate deposition transferring step, a bonding step, a thinning step, a residual silicon removal step, and a vertical LED chip preparation step. The transferring method of the edge-free vertical structure LED chip substrate disclosed by the invention can solve the problems in the current substrate transferring process by means ofthe epitaxial wafer surface treatment step, the thinning step, the residual silicon removal step and the like, which can obtain a comparatively excellent substrate transferring technology.

The invention discloses a corrosive agent for displaying the metallographic structure of an aluminum-magnesium alloy. The corrosive agent comprises an electrolytic corrosive agent and a chemical corrosive agent, wherein the electrolytic corrosive agent is composed of a sulfuric acid solution having the concentration of 18.4 mol / L, glycerin and water, and the volume ratio of the sulfuric acid solution to the glycerin to the water is 50-58: 20-40: 22; and the chemical corrosive agent is a phosphoric acid solution with the volume fraction of 20%, can make the metallographic structure of the corroded aluminum-magnesium alloy visible under an ordinary optical microscope, and has a good corrosion effect. The invention also discloses a corrosion method for displaying the metallographic structureof the aluminum-magnesium alloy. The method is simple in operation, and can be applied to the preparation of a metallographic specimen of the aluminum-magnesium alloy.

The invention provides a method for chemical etching of gallium arsenide wafers, which includes: using metal cleaner to rinse the gallium arsenide wafers; rinsing the gallium arsenide wafers in ammonia water; putting the gallium arsenide wafers into chemical etchant, etching the surface of each chip at 10-40 DEG C; using deionized water to flush the surface of each chip; and drying the chips. The invention further provides the chemical etchant for chemical etching of the gallium arsenide wafers, which comprises, in mass ratio, 3.2-20% of ammonia water, 8.3-33.0% of hydrogen peroxide and water. By the effective etching process using the chemical liquor, chip affected layers caused by machining procedures are removed, internal stress of the wafers is eliminated, the wafers meeting the requirement on epitaxial growth back roughness are produced, and the wafers have uniform backs and are free of back invasion and back scratch.

The invention provides a PMOS (P-channel metal oxide semiconductor) transistor and a manufacture method thereof. In order to increase pressure stress applied to trenches, sigma-shaped trenches of a source-drain region are filled with silicon-germanium material so that the surface of the silicon-germanium material is higher than that of a silicon substrate and that more silicon-germanium material is applied; in addition, during a semiconductor process, except that the PMOS transistor is made for a wafer, other semiconductor devices, such as an NMOS (N-channel metal oxide semiconductor) transistor, need to be made in other regions; accordingly, when ion implantation is performed on a wafer to form a light-doped region of the PMOS transistor, other regions need to be covered for protection with photoresist, and after a shallow junction is made, residue of the photoresist needs to be removed; the side of the silicon-germanium material is covered with a protective layer to prevent the silicon-germanium material from being corroded during a cleaning process, and carrier mobility is increased.

The invention relates to the wafer level vacuum package and the flip chip method of the microelectromechanical system, which comprises the following steps: nut cap glass sheets are perforated without getting through; tungsten alloy or chrome alloy is spattered on one side without perforating pin holes on the nut cap glass sheets and photoetching and corrosion are performed to form masks; the hydrofluoric acid is used to erode the glass cavity and erode through the pin holes without puncturing through; getter is spattered in the glass cavity; MEMS static electricity device structure wafers and the nut cap glass sheets are bonded by static electricity under the high temperature and the low pressure; metal electrodes are fabricated on the nut cap glass sheets and metal bumps are fabricated on the metal electrodes; single MEMS device chip after cutting is packaged with processing circuits by flip chip. The method package of the invention can be used in batch production, protect the MEMS device chips from outer pollution and damage and increase the pass-rate of production. The invention can be widely applied in the MEMS system.

The invention provides a uniform modification processing method of transparent medium microstructures. The uniform modification processing method comprises the following steps: processing a transparent medium by using first laser so that a plurality of modification regions are formed on the processed transparent medium; immersing the modified transparent medium into a corrosion solution to corrode the modification regions, verifying processing uniformity of the transparent medium and forming a plurality of hollow microstructures. The invention provides the uniform modification processing method of the transparent medium microstructures, the first laser comprises laser for generating high-temperature lattices and laser for reprocessing the high-temperature lattices, a preset time interval is reserved between the laser for generating the high-temperature lattices and the laser for reprocessing the high-temperature lattice, when the transparent medium is processed, by light beams which reach the transparent medium at first, the high-temperature lattice can be generated at a gathering position of the light beams by the transparent medium, light beams which reach the transparent medium later immediately process the high-temperature lattice, so that the uniformity of the transparent medium processed by the method is good, and the ideal design effect can be achieved.