39results about How to "Fast corrosion rate" patented technology

The invention provides a surface treated metal and a surface treatment method thereof and a metal resin complex and a preparation method of the metal resin complex. The surface treated metal comprises a metal body and an anodic oxidation film layer which is located on the surface of the metal body, the anodic oxidation film layer includes a barrier layer which is in contact with the metal body and a loose layer located on the outer surface of the barrier layer, the loose layer contains anodic oxidation film micropores, the pore diameter of the anodic oxidation film micropores is 10 nm-800 mum, the barrier layer contains barrier layer corrosion pores, the pore diameter of the barrier layer corrosion pores is 10 nm-800 mum, the metal body includes a corrosion layer which is in contact with the barrier layer, the corrosion layer contains metal corrosion pores, the pore diameter of the metal corrosion pores is 10 nm-1 mm, the metal is aluminum alloy or aluminum, the bonding force between the metal and resin is strong, and the surface treated metal is simple in process, is easy for large-scale production, and has no pollution.

The invention discloses a method for preparing a three-dimensional fluid channel in a transparent material. The complex three-dimensional fluid channel is prepared inside the transparent material by utilizing femtosecond lasers of circular polarization. The three-dimensional fluid channel prepared by the method disclosed by the invention has the advantages of same anisotropic etch rate and faster etch rate for a complex structure.

The invention discloses a silicon slice thinning method based on metal nano particle catalysis in the technical field of microelectronics. The method comprises the following steps of: pretreating a silicon slice (100) or (111) at normal temperature by using acetone, a CP4-A solution and hydrofluoric acid so as to obtain a clean silicon surface; and preparing a thinning solution which is formed byuniformly mixing silver nitrate, hydrogen peroxide and hydrofluoric acid, putting the thinning solution into a water bath for preheating, immersing the silicon slice into the thinning solution, and thus obtaining an ultrathin silicon slice with a required thickness by controlling reaction time, temperature and a solution ratio. In the method, the silicon slice can be uniformly etched by using a metal nano particle catalysis characteristic at the first time; a silicon slice thinning process is simplified by using a one-step method; characteristics of wet etching at near normal temperature and normal pressure can be retained, so the ultrathin silicon slice with the thickness of less than 50 microns can be obtained; furthermore, an application range of metal nano particle catalysis silicon etching is expanded; and a new idea and a new technical measure can be supplied to the silicon slice thinning process.

The invention discloses a 3Cr oil well pipe and a production method thereof, relates to a 3Cr oil well pipe for an acid oil-gas field and a manufacturing method thereof, and belongs to the technical field of metallurgy. The 3Cr oil well pipe comprises C, Si, Mn, S, P, Cr, Mo, V, Mo, Al, B, a rare-earth element and the balance of Fe and inevitable impurities. The production method for the 3Cr oil well pipe comprises the following steps of: selecting raw materials; smelting; continuously casting; continuously rolling; performing reheating and stretch sizing; and performing thermal refining. A treatment technology of removing stress by secondary sizing and hot straightening in the step of performing reheating and stretch sizing solves the technical problem that an S and CO2 resistant oil sleeve positioned in a hydrogen sulfide stress corrosion sensitive area has a low hydrogen sulfide stress corrosion resistant threshold value, is quickly corroded and is easily penetrated locally throughcorrosion.

The invention discloses a method for eroding 2Cr12Ni1Mo1V steel grain boundary, relating to a method for eroding the steel grain boundary. According to the method, solves the problem that the existing method for eroding 2Cr12Ni1Mo1V steel grain boundary can not really respond to the problem of 2Cr12Ni1Mo1Vsteel grain boundary usually. A method for eroding 2Cr12Ni1Mo1V steel grain boundary comprises the steps of 1. preparing a corrosion reagent; and 2. eroding 2Cr12Ni1Mo1V steel. The method for eroding 2Cr12Ni1Mo1V steel grain boundary is applied in evaluating grain degree of 2Cr12Ni1Mo1V steel.

The invention provides a uniform modification processing method of transparent medium microstructures. The uniform modification processing method comprises the following steps: processing a transparent medium by using first laser so that a plurality of modification regions are formed on the processed transparent medium; immersing the modified transparent medium into a corrosion solution to corrode the modification regions, verifying processing uniformity of the transparent medium and forming a plurality of hollow microstructures. The invention provides the uniform modification processing method of the transparent medium microstructures, the first laser comprises laser for generating high-temperature lattices and laser for reprocessing the high-temperature lattices, a preset time interval is reserved between the laser for generating the high-temperature lattices and the laser for reprocessing the high-temperature lattice, when the transparent medium is processed, by light beams which reach the transparent medium at first, the high-temperature lattice can be generated at a gathering position of the light beams by the transparent medium, light beams which reach the transparent medium later immediately process the high-temperature lattice, so that the uniformity of the transparent medium processed by the method is good, and the ideal design effect can be achieved.

The invention discloses a transferring method of an edge-free vertical structure LED chip substrate. The transferring method of the edge-free vertical structure LED chip substrate comprises a metal layer depositing step, an epitaxial wafer surface treatment step, a substrate deposition transferring step, a bonding step, a thinning step, a residual silicon removal step, and a vertical LED chip preparation step. The transferring method of the edge-free vertical structure LED chip substrate disclosed by the invention can solve the problems in the current substrate transferring process by means ofthe epitaxial wafer surface treatment step, the thinning step, the residual silicon removal step and the like, which can obtain a comparatively excellent substrate transferring technology.

The invention discloses a MOS transistor and a manufacturing method therefor. In order to improve the carrier migration rate of the MOS transistor, the size of an opening of a bowl-shaped groove is controlled during the forming of a sigma-shaped groove, so as to enable the size of the opening to be greater than the distance between side walls of the adjacent grid structures. In other words, the size of the opening of the bowl-shaped groove is controlled to be great as much as possible, thereby enabling the size of the opening of the sigma-shaped groove formed by the corrosion of the bowl-shaped groove to be greater, enabling pressure stress materials or tensile stress materials placed in a source-drain region to be more, enabling the tensile stress or pressure stress applied to a trench to be greater, and enabling the carrier migration rate to be greater.

The invention discloses a method for preparing an STI isolation structure. After completing a filling of a shallow groove and removing a hard mask, the method also comprises the following steps: depositing one layer of phosphor on the surface of an oxide layer of a cushion layer; diffusing the phosphor on the surface of the oxide layer of the cushion layer to form phosphorosilicate glass while depositing; and eroding the phosphorosilicate glass through a wet method. The preparation method utilizes the phosphor doping distribution to decide the corrosion speed of each region, finally carries out rounding treatment on corners of the STI structure and is suitable for manufacturing an integrated circuit.

The invention discloses a battery piece wool making corrosive liquid which contains sodium hydroxide, tetramethylammonium hydroxide, nonionic and anion compounded surfactant and water, wherein the nonionic surfactant in the nonionic and anion compounded surfactant is sodium silicate; and the anion surfactant in the nonionic and anion compounded surfactant is one or two of lauryl sodium sulfate fatty alcohol ether sodium sulfate. Due to adoption of the nonionic and anion compounded surfactant in the corrosive liquid, an ideal texture effect is achieved when being compared with that of IPA (Isopropanol), and a silicon piece is low in reflection rate and relatively good in surface cleanliness after wool making; meanwhile tetramethylammonium hydroxide has a corrosion selective ratio approximate to that of NaOH, a pyramid formed on a woof surface on the surface of the silicon piece is small in size and high in corrosion velocity, and then the wool making time is effectively shortened; and in addition, the surfactants in the solution act up together, so that the smoothness and the uniformity of the wool surface are improved, and the surface reflection rate is reduced.

The invention provides a corrosive liquid, and a preparation method and application thereof. The corrosive liquid is prepared from, by mass, 0.5-4.5% of alkali, 0.01-0.225% of potassium sorbate, 0.01-0.225% of sodium acetate, 0.005-0.15% of sodium dodecyl benzene sulfate, 0.055-0.46% of a de-foaming agent, 0.055-0.78% of a surfactant, 0.035-0.42% of a dispersing agent, 0.47-4.42% of a functional auxiliary agent, and the balance of water. When the corrosive liquid is used for preparing a substrate layer, the corrosive liquid can control the back surface of a substrate to form a relatively uniform pyramid-shaped suede, can ensure that an emitter layer on the front surface of the substrate is not damaged, and can control the size of the pyramid to keep a relatively low pyramid-shaped height-width ratio, so that the specific surface area of the suede on the back surface is reduced, the back surface passivation is facilitated, and the composition is reduced; and the solar energy conversion efficiency of the N-type contact cell is improved.

The invention discloses a PMUT unit driven by embedded arch thin films and a preparation method thereof. The PMUT unit comprises vibration thin films, a driving layer and a substrate sequentially arranged from top to bottom, wherein the driving layer comprises a supporting structure and a driving structure, the substrate comprises a back cavity and a base, and the back cavity is formed by the driving layer and the base in an enclosing mode; and the driving structure is provided with a horizontal part and a plurality of arch parts, the arch parts are marked as the embedded arch driving films, the embedded arch driving films are located right above the back cavity, and the lower end surface of the horizontal part is connected with the upper end surface of the base. According to the PMUT unit, the purpose of improving the resonant frequency under the condition of the same area of the vibration thin films is achieved, electrodes and the driving layer are sealed in the back cavity, only thevibration thin films playing a role in vibration and support make contact with the outside, and the direct contact between the sensitive element part of a PMUT chip and the outside is completely isolated, so that PMUT is more durable.