39results about How to "Fast corrosion rate" patented technology

The invention discloses a MOS transistor and a manufacturing method therefor. In order to improve the carrier migration rate of the MOS transistor, the size of an opening of a bowl-shaped groove is controlled during the forming of a sigma-shaped groove, so as to enable the size of the opening to be greater than the distance between side walls of the adjacent grid structures. In other words, the size of the opening of the bowl-shaped groove is controlled to be great as much as possible, thereby enabling the size of the opening of the sigma-shaped groove formed by the corrosion of the bowl-shaped groove to be greater, enabling pressure stress materials or tensile stress materials placed in a source-drain region to be more, enabling the tensile stress or pressure stress applied to a trench to be greater, and enabling the carrier migration rate to be greater.

The invention provides a PMOS (P-channel metal oxide semiconductor) transistor and a manufacture method thereof. In order to increase pressure stress applied to trenches, sigma-shaped trenches of a source-drain region are filled with silicon-germanium material so that the surface of the silicon-germanium material is higher than that of a silicon substrate and that more silicon-germanium material is applied; in addition, during a semiconductor process, except that the PMOS transistor is made for a wafer, other semiconductor devices, such as an NMOS (N-channel metal oxide semiconductor) transistor, need to be made in other regions; accordingly, when ion implantation is performed on a wafer to form a light-doped region of the PMOS transistor, other regions need to be covered for protection with photoresist, and after a shallow junction is made, residue of the photoresist needs to be removed; the side of the silicon-germanium material is covered with a protective layer to prevent the silicon-germanium material from being corroded during a cleaning process, and carrier mobility is increased.

The invention provides a uniform modification processing method of transparent medium microstructures. The uniform modification processing method comprises the following steps: processing a transparent medium by using first laser so that a plurality of modification regions are formed on the processed transparent medium; immersing the modified transparent medium into a corrosion solution to corrode the modification regions, verifying processing uniformity of the transparent medium and forming a plurality of hollow microstructures. The invention provides the uniform modification processing method of the transparent medium microstructures, the first laser comprises laser for generating high-temperature lattices and laser for reprocessing the high-temperature lattices, a preset time interval is reserved between the laser for generating the high-temperature lattices and the laser for reprocessing the high-temperature lattice, when the transparent medium is processed, by light beams which reach the transparent medium at first, the high-temperature lattice can be generated at a gathering position of the light beams by the transparent medium, light beams which reach the transparent medium later immediately process the high-temperature lattice, so that the uniformity of the transparent medium processed by the method is good, and the ideal design effect can be achieved.