Transferring method of edge-free vertical structure LED chip substrate

Abstract

The invention discloses a transferring method of an edge-free vertical structure LED chip substrate. The transferring method of the edge-free vertical structure LED chip substrate comprises a metal layer depositing step, an epitaxial wafer surface treatment step, a substrate deposition transferring step, a bonding step, a thinning step, a residual silicon removal step, and a vertical LED chip preparation step. The transferring method of the edge-free vertical structure LED chip substrate disclosed by the invention can solve the problems in the current substrate transferring process by means ofthe epitaxial wafer surface treatment step, the thinning step, the residual silicon removal step and the like, which can obtain a comparatively excellent substrate transferring technology.

Description

technical field

[0001] The invention relates to the field of LED manufacturing, in particular to a method for transferring a vertical structure LED chip substrate with no edge damage. Background technique

[0002] At present, sapphire-based horizontal structure LED chips cannot be applied to the field of high-power LED lighting due to poor heat dissipation, electrode light blocking, and lateral current congestion effects; the corresponding vertical structure LED chips are excellent due to their single-sided light emission and vertical current distribution. , Excellent heat dissipation and other characteristics gradually replace horizontal structure LED chips in the field of high-power lighting. Substrate transfer is the core technology of vertical structure LED chips. Since the growth substrate is generally sapphire or silicon, the sapphire substrate is not conductive and needs to be removed by laser lift-off (LLO). At the same time, since the bandgap material of silicon is...

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