Preparation method of ferroelectric single crystal film for infrared focal plane device

An infrared focal plane, ferroelectric single crystal technology, applied in the direction of semiconductor devices, circuits, electrical components, etc., can solve problems such as difficult to prepare two-dimensional focal plane array devices, lithium tantalate single crystal thin films, complex processes, etc. , to achieve cost reduction, integrity and quality protection, and low corrosion temperature

Active Publication Date: 2020-08-25
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
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  • Application Information

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Problems solved by technology

[0005] Due to the long time-consuming, complicated process and serious material waste of the solid dry etching process, the most critical thing is that it is difficult to prepare two

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  • Preparation method of ferroelectric single crystal film for infrared focal plane device
  • Preparation method of ferroelectric single crystal film for infrared focal plane device
  • Preparation method of ferroelectric single crystal film for infrared focal plane device

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[0039] The present invention provides a method for preparing a ferroelectric single crystal film for infrared focal plane devices, with figure 1 The preparation process of the ferroelectric single crystal film is described. The specific steps are as follows:

[0040] (1) Sample preparation: Cut the silicon-based lithium tantalate single crystal film into 0.5cm×0.5cm or 1.0cm×1.0cm size, rinse with deionized water, and blow dry with nitrogen.

[0041] (2) Obtain a self-supporting lithium tantalate film: place the silicon-based lithium tantalate wafer in a tetramethylammonium hydroxide solution with a concentration of 10%, and heat the water bath to 75-85°C for 12-24 hours. After the silicon is completely corroded, the lithium tantalate film is taken out and placed in anhydrous alcohol, and then the lithium tantalate film is taken out with the Mylar film and dried naturally.

[0042] (3) Fix the lithium tantalate on the temporary slide: spin-coating photoresist on the temporary slide. ...

Example Embodiment

[0048] Example

[0049] (1) Cut the silicon-based lithium tantalate single crystal film into a size of 1.0 cm×1.0 cm, rinse with deionized water, and blow dry with nitrogen.

[0050] (2) Place the silicon-based lithium tantalate wafer in a tetramethylammonium hydroxide solution with a concentration of 10%, and heat the water bath to 80°C for 24 hours. After the silicon is completely corroded, the lithium tantalate film is taken out and placed In anhydrous alcohol, the lithium tantalate film was then taken out with Mylar film and dried naturally.

[0051] (3) Use a step meter to test the thickness of the lithium tantalate film on the Mylar film, and test 5 different samples. The test results are as follows image 3 As shown, the average thickness is approximately 5.14 μm.

[0052] (4) Spin-coating photoresist on the silicon wafer, the photoresist model is AZ5214, the rotation speed is 1000 rpm, and the spin coating is 40 seconds, and then the silicon wafer with photoresist is placed ...

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Abstract

The invention discloses a preparation method of a ferroelectric single crystal film for an infrared focal plane device. According to the method, a lithium tantalate (LiTaO3) single crystal film on a silicon-based substrate is peeled off and transferred to a specific substrate, the pyroelectric performance of a single crystal material is reserved, and the key technologies comprise the technologicalconditions of silicon-based substrate corrosion, self-supporting film transfer, electrode preparation and performance testing. Firstly, the silicon-based lithium tantalate film is placed in corrosiveliquid, reacts for a period of time at a certain temperature and then is transferred into alcohol to be subjected to secondary transfer operation, so that the self-supporting film is formed on a specific substrate. Then, an upper electrode and a lower electrode are prepared by utilizing electron beam evaporation, and the pyroelectric coefficient of the single crystal film is measured by using a self-made pyroelectric coefficient testing system; according to the technology, the large-area and uniform self-supporting lithium tantalate single crystal film can be obtained, and the method can be used for preparing a high-sensitivity uncooled infrared focal plane device.

Description

technical field [0001] The invention relates to the technical field of uncooled infrared detection, in particular to a ferroelectric single crystal thin film material with large area, excellent performance and uniformity, which is used for preparing high-performance infrared focal plane array detectors. Background technique [0002] Uncooled thermal detectors mainly include: pyroelectric, bolometer, thermopile type. The working principle of pyroelectric detectors is based on the pyroelectric effect, that is, changes in temperature cause changes in the polarization of materials. When infrared radiation hits a capacitor composed of ferroelectric materials, the temperature of the material changes after absorbing the infrared radiation, resulting in a change in the polarization, which is manifested as a change in the bound charge density at the interface of the capacitor, thus realizing the process of sensing infrared radiation through electrical means . The working mode of th...

Claims

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Application Information

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IPC IPC(8): H01L31/0216H01L31/18H01L31/09H01L27/144
CPCH01L31/0216H01L31/02161H01L31/1892H01L31/09H01L27/144Y02P70/50
Inventor 王旭东林铁陈艳王建禄孟祥建沈宏葛军
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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