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Preparation method of ferroelectric single crystal film for infrared focal plane device

An infrared focal plane, ferroelectric single crystal technology, applied in the direction of semiconductor devices, circuits, electrical components, etc., can solve problems such as difficult to prepare two-dimensional focal plane array devices, lithium tantalate single crystal thin films, complex processes, etc. , to achieve cost reduction, integrity and quality protection, and low corrosion temperature

Active Publication Date: 2020-08-25
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Summary
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Due to the long time-consuming, complicated process and serious material waste of the solid dry etching process, the most critical thing is that it is difficult to prepare two-dimensional focal plane array devices.
Therefore, the preparation of lithium tantalate single crystal thin film by traditional dry etching process is not a scientific technical route.

Method used

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  • Preparation method of ferroelectric single crystal film for infrared focal plane device
  • Preparation method of ferroelectric single crystal film for infrared focal plane device
  • Preparation method of ferroelectric single crystal film for infrared focal plane device

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preparation example Construction

[0039] The invention proposes a method for preparing a ferroelectric single crystal thin film for infrared focal plane devices, with figure 1 The preparation process of the ferroelectric single crystal thin film is described, and the specific steps are as follows:

[0040] (1) Sample preparation: cut silicon-based lithium tantalate single crystal film into 0.5cm×0.5cm or 1.0cm×1.0cm size, wash with deionized water, and blow dry with nitrogen.

[0041] (2) Obtaining a self-supporting lithium tantalate film: place a silicon-based lithium tantalate wafer in a 10% tetramethylammonium hydroxide solution, heat it in a water bath to 75-85° C., and continue for 12-24 hours. After the silicon is completely corroded, the lithium tantalate film is taken out and placed in absolute alcohol, and then the lithium tantalate film is taken out with a Mylar film and dried naturally.

[0042] (3) Fix lithium tantalate on the temporary carrier: Spin-coat photoresist on the temporary carrier, the ...

Embodiment

[0049] (1) Cut the silicon-based lithium tantalate single crystal film into a size of 1.0 cm×1.0 cm, wash it with deionized water, and dry it with nitrogen gas.

[0050] (2) Place the silicon-based lithium tantalate wafer in a 10% tetramethylammonium hydroxide solution, heat it in a water bath to 80°C, and continue for 24 hours. After the silicon is completely corroded, take out the lithium tantalate film and place it In anhydrous alcohol, then remove the lithium tantalate film with Mylar film and let it dry naturally.

[0051] (3) Test the thickness of the lithium tantalate film on the Mylar film with a step meter, and test 5 different samples respectively. The test results are as follows image 3 As shown, the average thickness is about 5.14 μm.

[0052] (4) Spin-coat photoresist on the silicon wafer, the photoresist model is AZ5214, the rotating speed is 1000 rpm, spin-coat for 40 seconds, then place the silicon wafer with the photoresist in absolute alcohol, use Mylar Me...

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Abstract

The invention discloses a preparation method of a ferroelectric single crystal film for an infrared focal plane device. According to the method, a lithium tantalate (LiTaO3) single crystal film on a silicon-based substrate is peeled off and transferred to a specific substrate, the pyroelectric performance of a single crystal material is reserved, and the key technologies comprise the technologicalconditions of silicon-based substrate corrosion, self-supporting film transfer, electrode preparation and performance testing. Firstly, the silicon-based lithium tantalate film is placed in corrosiveliquid, reacts for a period of time at a certain temperature and then is transferred into alcohol to be subjected to secondary transfer operation, so that the self-supporting film is formed on a specific substrate. Then, an upper electrode and a lower electrode are prepared by utilizing electron beam evaporation, and the pyroelectric coefficient of the single crystal film is measured by using a self-made pyroelectric coefficient testing system; according to the technology, the large-area and uniform self-supporting lithium tantalate single crystal film can be obtained, and the method can be used for preparing a high-sensitivity uncooled infrared focal plane device.

Description

technical field [0001] The invention relates to the technical field of uncooled infrared detection, in particular to a ferroelectric single crystal thin film material with large area, excellent performance and uniformity, which is used for preparing high-performance infrared focal plane array detectors. Background technique [0002] Uncooled thermal detectors mainly include: pyroelectric, bolometer, thermopile type. The working principle of pyroelectric detectors is based on the pyroelectric effect, that is, changes in temperature cause changes in the polarization of materials. When infrared radiation hits a capacitor composed of ferroelectric materials, the temperature of the material changes after absorbing the infrared radiation, resulting in a change in the polarization, which is manifested as a change in the bound charge density at the interface of the capacitor, thus realizing the process of sensing infrared radiation through electrical means . The working mode of th...

Claims

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Application Information

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IPC IPC(8): H01L31/0216H01L31/18H01L31/09H01L27/144
CPCH01L31/0216H01L31/02161H01L31/1892H01L31/09H01L27/144Y02P70/50
Inventor 王旭东林铁陈艳王建禄孟祥建沈宏葛军
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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