Chemical etching transfer method for CVD epitaxial growth of graphene based on Gan substrate

Abstract

The invention discloses a chemical corrosion transfer method based on GaN substrate CVD epitaxial growth graphene. The problems that a copper substrate is wasted, and graphene transfer wastes time in the prior art are mainly solved. The chemical corrosion transfer method comprises the implementation steps that (1), a-face silicon carbide is arranged in an MOCVD reaction chamber, a gallium source and ammonia gas are filled into the MOCVD reaction chamber, and a-face GaN is grown; (2), a Cu thin film is deposited on the GaN through electron beam evaporation; (3), H2 is filled into the MOCVD reaction chamber, and thermal annealing is carried out on the Cu thin film; (4), H2 and CH4 are filled into the MOCVD reaction chamber, and the graphene is grown through chemical meteorology deposition; (5), the surface of the graphene is coated with photoresist in a spinning mode, the graphene is placed in potassium oxide solutions, a GaN middle layer is accelerated to be corroded with the help of lasers, and then the lower Cu thin film is corroded and removed; (6), the photoresist of the graphene with the thin film corroded and removed is upwards placed in an insulation substrate, the graphene is heated after being dried through air, then the graphene is cooled to indoor temperature and is placed in acetone to remove the photoresist on the upper surface of the graphene, and graphene transfer is achieved. The chemical corrosion transfer method has the advantages of being short in transfer time and saving the Cu substrate.

Description

technical field [0001] The invention belongs to the field of microelectronics technology, and relates to a method for manufacturing and transferring graphene, in particular to a method for growing graphene based on chemical vapor deposition CVD epitaxial growth of a gallium nitride (GaN) substrate and transferring graphene by chemically corroding a substrate , which can be used for the growth and transfer of graphene materials in CVD epitaxy equipment. technical background [0002] Graphene is a carbon-based two-dimensional crystal with excellent physical and chemical properties. Two-dimensional electron density on graphene surface reaches 10 13 cm -2 , the mobility of electrons exceeds 200,000 cm 2 V -1 the s -1 , electron saturation drift speed up to 10 8 cms -1 . Due to these excellent electrical properties, graphene has the potential to manufacture ultra-high-speed electronic devices. In 2010, IBM successfully developed a graphene FET with the highest frequency e...

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Problems solved by technology

However, because the non-graphene contact surface is attached to other substrates, and the other side is covered by graphene, only the metal side is in contact with the corrosion solution, the effective contact surface is extremely small, the corrosion time is greatly increased, and the corrosion effect is significantly worse. , so that the electrical properties of graphene degrade

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