A system to prevent polishing pads from scratching wafers

A technology for polishing pads and wafers, which is applied to polishing devices, grinding machine tools, electrical components, etc., can solve problems such as ineffectiveness and ineffectiveness, and achieve the effect of reducing costs and improving yield

Active Publication Date: 2017-01-04
SHANGHAI HUALI MICROELECTRONICS CORP
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Through the method of this patent, wafer scratches are avoided, but for the macroscopic scratches of mechanical grinding, the above method is not effective, and there is no effective way for the time being

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A system to prevent polishing pads from scratching wafers
  • A system to prevent polishing pads from scratching wafers
  • A system to prevent polishing pads from scratching wafers

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] The present invention provides a method for preventing chemical mechanical grinding macroscopic scratches, which can be applied to processes with technical nodes of 90nm, 65 / 55nm, 45 / 40nm, 32 / 28nm, greater than or equal to 130nm and less than or equal to 22nm; it can be applied to the following In the technology platform: Logic, Memory, RF, HV, Analog / Power, MEMS, CIS, Flash, eFlash and Package.

[0026] Such as Figure 1-3 Shown, a system for preventing polishing pads from scratching wafers, the system includes:

[0027] A cleaning disc, the surface of which is provided with a plurality of protruding diamonds, and each exposed surface of the diamonds is covered with a layer of magnetic material;

[0028] A grinding pad, the surface of which is set opposite to the surface of the cleaning disc;

[0029] A magnetic sensor, arranged below the polishing pad, to detect the magnetic condition on the surface of the polishing pad;

[0030] Wherein, during the chemical mechan...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a system for preventing a wafer from being scratched by a grinding mat. The system comprises a cleaning disc, the grinding mat and a magnetic inductor. A plurality of convex diamonds are arranged on the surface of the cleaning disc, the exposed surface of each diamond is covered with a layer of magnetic materials, the surface of the grinding mat is arranged to be opposite to the surface of the cleaning disc, and the magnetic inductor is arranged below the grinding mat to detect the magnetic condition of the surface of the grinding mat. In addition, the system further comprises an alarm device. In the grinding process, if magnetic materials on the cleaning disc fall on the grinding mat, the magnetic materials can be induced by the magnetic inductor, the alarm device is triggered, and the grinding mat stops grinding. According to the system, the effect whether the wafer is scratched by falling of the diamonds or not can be monitored in real time, the condition that the wafer is scrapped due to serious scratching is avoided, the product yield is greatly improved, and cost is reduced.

Description

technical field [0001] The invention relates to the technical field of improving chemical mechanical polishing equipment, in particular to a system for preventing a polishing pad from scratching a wafer. Background technique [0002] In the chemical mechanical polishing process, wafer scratches are the main killer of product yield. According to the characteristics of scratches, wafer scratches can be subdivided into macro scratches and fine scratches. Macroscopic scratches are mainly due to the fact that during the grinding process, there are hard objects on the polishing pad that damage the wafer surface. These hard objects may be that the diamonds from the cleaning disk fall off, causing huge scratches, and usually causing product scrapping. The existing technology is only in the chemical mechanical Before and after the grinding, the grinding pad is cleaned with high-pressure water flow to wash away the impurity particles that may be generated during the grinding process, ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): B24B37/34
CPCB24B37/005H01L21/02013
Inventor 丁弋朱也方严钧华
Owner SHANGHAI HUALI MICROELECTRONICS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap