Method for improving metal filling uniformity of TSV

A technology of metal filling and uniformity, applied in the field of semiconductor TSV process and process, can solve the problems of CMP process difficulty of seed layer thickness, increase the difficulty of electroplating process, narrowing of openings, etc., so as to improve coverage, improve uniformity, and process simple steps

Active Publication Date: 2014-06-25
NAT CENT FOR ADVANCED PACKAGING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Whether it is the increase of the thickness of the barrier layer or the seed layer, it will make the subsequent CMP process extremely difficult.
In addition, since the opening position of the TSV has a

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0013] The present invention will be further described below in conjunction with specific examples.

[0014] In order to improve the uniformity of metal filling on the sidewall of the high aspect ratio TSV, the specific implementation method of the present invention is as follows:

[0015] A desired number of process cycles are performed within the TSV, one cycle of the process cycle comprising a deposition step followed by a sputtering redistribution step. Wherein, the deposition step includes a high-pressure deposition step and a low-pressure deposition step; the sputtering redistribution step includes a high bias power sputtering redistribution step and a uniformly reduced bias power sputtering redistribution step.

[0016] Specifically, the gas pressure range of high pressure deposition is about 0.8mTorr-1.0mTorr. Due to the strong scattering effect of Ar ions and Ar molecules on metal ions under high pressure, the directionality of metal ions is relatively poor, and a ce...

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Abstract

The invention relates to a technological method, in particular to a method for improving the metal filling uniformity of a TSV, and belongs to the technical field of semiconductor TSV technology. According to the technical scheme, the method for improving the metal filling uniformity of the TSV comprises the steps that firstly, the overall coverage rate of the TSV is obtained by means of step-by-step deposition; next, the local coverage uniformity is improved through a redistribution method. According to the method, the process steps are simple, the uniformity of metal filling of the side wall of the TSV with a high aspect ratio can be improved, and the method is safe and reliable.

Description

technical field [0001] The invention relates to a process method, in particular to a method for improving the uniformity of TSV metal filling, which belongs to the technical field of semiconductor TSV process. Background technique [0002] The existing NMC TSV PVD machine is used to fill the barrier layer / seed layer, and the uniformity is poor. The coverage rates are significantly lower than those at other positions on the sidewall; within a scallop (scallop structure) range of the TSV sidewall, the coverage at the upper part of the scallop is significantly lower than that at the lower part of the scallop. [0003] In the experiment, it was found that the coverage rate of the TSV hole side wall is about 1 / 5 hole deep from the bottom to 3 / 5 hole depth from the bottom, and the coverage rate is already very low. The upper part of the wall scallop is where the coverage of the barrier layer / seed layer is the weakest, and even discontinuity occurs. [0004] For the barrier layer...

Claims

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Application Information

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IPC IPC(8): H01L21/768
CPCH01L21/76882H01L21/76898H01L2221/1068
Inventor 杨素素张文奇
Owner NAT CENT FOR ADVANCED PACKAGING
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