A kind of dilute magnetic semiconductor material and its preparation method

A technology of dilute magnetic semiconductors and precursors, which is used in the growth of polycrystalline materials, the magnetism of inorganic materials, chemical instruments and methods, etc., can solve the problems of carriers and spins that cannot be separately regulated and limited chemical solubility.

Active Publication Date: 2017-07-21
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Typically based on III-V semiconductors, such as (Ga,Mn)As and (Ga,Mn)N (H.Ohno, et al., Science 281,951-956(1998)), Mn 2+ replace Ga 3+ , due to unequal substitution, resulting in very limited chemical solubility, can only be prepared in the form of epitaxial thin films, and the carriers and spins cannot be adjusted separately

Method used

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  • A kind of dilute magnetic semiconductor material and its preparation method
  • A kind of dilute magnetic semiconductor material and its preparation method
  • A kind of dilute magnetic semiconductor material and its preparation method

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Embodiment 1

[0034] This embodiment provides a method for preparing a dilute magnetic semiconductor material, including:

[0035] 1) In a glove box filled with argon gas, Zn powder, Mn powder and As powder are uniformly mixed according to the molar ratio of 1:1:2, and pressed into small discs;

[0036]2) Weigh the Ba block and the K block according to the molar ratio of Ba:K:Zn:Mn:As=0.95:0.05:1:1:2, and mix the Zn powder obtained in step 1), the mixture of Mn powder and As powder The disk is put into the alumina ceramic test tube together with the Ba block and the K block;

[0037] 3) Vacuum seal the alumina ceramic test tube with the sample in the quartz tube, then pour 0.2 Bar argon gas into the quartz tube and seal it, place the quartz tube in a high-temperature furnace, and sinter at 750°C for 20 hours. The composition is obtained as (Ba 0.95 K 0.05 )(Zn 0.5 mn 0.5 ) 2 As 2 dilute magnetic semiconductor crystals.

[0038] Utilize Philips X'pert diffractometer to carry out X-ra...

Embodiment 2

[0040] This embodiment provides a method for preparing a dilute magnetic semiconductor material, including:

[0041] 1) In a glove box filled with argon gas, Zn powder, Mn powder and As powder are uniformly mixed according to the molar ratio of 1.9:0.1:2, and pressed into small discs;

[0042] 2) Weigh the Ba block and the K block according to the molar ratio of Ba:K:Zn:Mn:As=0.5:0.5:1.9:0.1:2, and mix the Zn powder obtained in step 1), the mixture of Mn powder and As powder The disc is put into the alumina ceramic test tube together with the Ba block and the K block, wherein the mixture disc of Zn powder, Mn powder and As powder is placed under the Ba block and the K block;

[0043] 3) Vacuum seal the alumina ceramic test tube with the sample in the quartz tube, then pour 0.2 Bar argon gas into the quartz tube and seal it, place the quartz tube in a high-temperature furnace, and sinter at 950°C for 30 hours. The composition is obtained as (Ba 0.5 K 0.5 )(Zn 0.95 mn 0.05 ...

Embodiment 3

[0046] This embodiment provides a method for preparing a dilute magnetic semiconductor material, including:

[0047] 1) Using the solid-state reaction method under normal pressure, the 99.9% pure Ba block and As powder were mixed at a molar ratio of 1:1, pressed into tablets, and packaged in a vacuum quartz tube, sintered at 600 ° C, and kept warm Within 24 hours, a single-phase BaAs compound powder was prepared;

[0048] 2) Using a solid-state reaction method under normal pressure, mix 99.9% pure K block and As powder at a molar ratio of 1:1, and package them in a vacuum quartz tube, sinter at 500°C, and keep warm for 24 hours. Prepare single-phase KAs compound powder;

[0049] 3) In a glove box filled with argon, weigh BaAs compound powder, KAs compound powder, Zn powder, Mn powder according to the molar ratio of Ba:K:Zn:Mn:As=0.7:0.3:1.7:0.3:2 and As powder, and put them into an alumina ceramic test tube together, then put the ceramic test tube with the sample into the qu...

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Abstract

The invention provides a diluted magnetic semiconductor material, the chemical formula of which is (Ba1-xKx)(Zn1-yMny)2As2, wherein x is greater than 0 and smaller than 0.5, and y is greater than 0 and smaller than 0.5. The invention also provides a preparation method of the material. The method comprises: preparing a precursor, which is a mixture of the five elementary substances Ba, K, Zn, Mn and As or a mixture of BaAs, KAs, Zn, Mn and As, in the precursor, with Ba, K, Zn, Mn and As being in a molar ratio of 1-x:x:2(1-y):2y:2, wherein x is greater than 0 and smaller than 0.5, and y is greater than 0 and smaller than 0.5; and under the protection of an inert gas, heating the precursor for more than 5h to 600-1000DEG C, thus obtaining the (Ba1-xKx)(Zn1-yMny)2As2.

Description

technical field [0001] The invention relates to a dilute magnetic semiconductor material, in particular to a ThCr 2 Si 2 type dilute magnetic semiconductor crystal material. Background technique [0002] Diluted magnetic semiconductor materials have attracted extensive attention due to their potential applications in the field of spintronic devices. Diluted magnetic semiconductors are generally obtained by introducing a small amount of magnetic ions into the semiconductor. Typically based on III-V semiconductors, such as (Ga,Mn)As and (Ga,Mn)N (H.Ohno, et al., Science 281,951-956(1998)), Mn 2+ replace Ga 3+ , due to unequal substitution, resulting in very limited chemical solubility, can only be prepared in the form of epitaxial thin films, and the carriers and spins cannot be adjusted separately. Recently, the dilute magnetic semiconductor Li(Zn,Mn)As based on group I-II-V semiconductor LiZnAs was successfully prepared (Z.Deng et al., Nature Communications 2:422(2011))...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/10H01F1/01
Inventor 赵侃邓正靳常青
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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