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Manganese doped silicon base magnetic semiconductor film material and making method

A magnetic semiconductor and thin-film material technology, which is applied in the fields of inorganic material magnetism, metal material coating process, inductor/transformer/magnet manufacturing, etc., can solve the problems of unavailable, low solid solubility of manganese element, etc.

Inactive Publication Date: 2006-03-29
NANJING UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The main difficulty is that, due to the low solid solubility of manganese in silicon materials (about one part per million) under normal conditions, it is impossible to obtain high concentrations (one to five percent) of substitution doping. heterogeneous for effective magnetic coupling

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  • Manganese doped silicon base magnetic semiconductor film material and making method
  • Manganese doped silicon base magnetic semiconductor film material and making method
  • Manganese doped silicon base magnetic semiconductor film material and making method

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Embodiment Construction

[0023] In order to make full use of the advantages of silicon materials that have been widely used in the field of microelectronics and lay a solid material foundation for the wide application of spin ideas, we have invented a unique and currently the only effective process to prepare manganese-doped Silicon-based magnetic semiconductors.

[0024] The process actually consists of 2 or 3 steps: the first step is to prepare a silicon film with the required manganese content; then, crystallize the prepared manganese-containing silicon film to obtain a crystallized silicon material ; Finally, instant sintering of the crystallized silicon material.

[0025] A typical process is to use radio frequency magnetron co-sputtering to deposit a silicon film with a thickness of 2 microns and a manganese content of 1-8% under the working pressure of 1-4Pa. Using nitrogen as a protective gas, the manganese-containing silicon film is processed in a thermal annealing furnace. The annealing te...

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Abstract

The invention is a kind of manganese-doped silicon group magnetic semiconductor film material. The content of the manganese in the silicon is 1-10% mol ratio. The thickness is 1-10000nm. The manufacturing method is: uses the vacuum manganese splattering method on the silicon film material, the silicon film can be produced which contains the 1-10% manganese and whose thickness is 1-10 mum, then the silicon material is crystallized under 900-1400 degree s and under the protection of protection gas fro 20 minute to 2 hours, the semiconductor silicon performance can be acquired. The rion magnetism has an iron magnetism conversion temperature over 400K; at the same time, the other transmission character of the product is also the character of semiconductor.

Description

1. Technical field [0001] The present invention relates to the field of material characteristics and preparation methods, and in particular, the invention provides a unique method. Through the method, manganese (Mn) can be effectively doped to the semiconductor silicon (Si) material to produce ferromagnetism with a Curie temperature higher than room temperature, and a silicon-based magnetic semiconductor with broad practical prospects can be prepared. 2. Background technology [0002] In the past half century, modern electronic science and technology have greatly changed people's work and life style, and unparalleledly promoted the development of human civilization. One of the greatest achievements in the 20th century is microelectronics and its application. [0003] However, all of these achievements have only been achieved by taking advantage of one of the inherent properties of electrons, namely the negative charge they carry. Another important characteristic of electron...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01F1/40H01F41/02C23C14/34C23C14/06
Inventor 张凤鸣都有为
Owner NANJING UNIV
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