Cadmium-based ferromagnetic semiconductor material and preparation method thereof

A semiconductor and ferromagnetic technology, which is used in the selection of materials, the magnetic properties of inorganic materials, and the manufacture of inductors/transformers/magnets. High transition temperature and good stability

Active Publication Date: 2019-03-08
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, most of the existing ferromagnetic semiconductor materials are thin films, and there are problems such as poor stability, low purity, and high requirements for preparation process conditions.

Method used

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  • Cadmium-based ferromagnetic semiconductor material and preparation method thereof
  • Cadmium-based ferromagnetic semiconductor material and preparation method thereof
  • Cadmium-based ferromagnetic semiconductor material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0083] This embodiment provides a method for preparing a ferromagnetic semiconductor material, comprising the following steps:

[0084] 1) 3.153 grams of SrAs powder, 4.361 grams of Cd powder, 1.528 grams of As powder, 0.066 grams of Mn powder and 0.029 grams of Na 3 As powder is uniformly mixed (the atomic content ratio of Sr:Na:Cd:Mn:As is 0.97:0.03:1.94:0.06:2), and the mixture is pressed into an alumina ceramic test tube;

[0085] 2) Put the ceramic test tube with the reactant into the vacuum-sealed quartz tube;

[0086] 3) Put the quartz tube in a high-temperature furnace and sinter at a temperature of 700° C. for 30 hours.

[0087] The block product obtained in step 3) was ground into powder, and subjected to X-ray diffraction analysis. figure 1 is its X-ray diffraction pattern, from figure 1 It can be concluded that the sample is a hexagonal crystal system, and all diffraction peaks have corresponding diffraction indices, and there are no miscellaneous peaks, that is...

Embodiment 2

[0094] This embodiment provides a method for preparing a ferromagnetic semiconductor material, comprising the following steps:

[0095] 1) 3.088 grams of SrAs powder, 4.272 grams of Cd powder, 1.548 grams of As powder, 0.11 grams of Mn powder and 0.048 grams of Na 3 As powder is evenly mixed (the atomic content ratio of Sr:Na:Cd:Mn:As is 0.95:0.05:1.90:0.10:2), and the mixture is put into a niobium tube under the protection of argon and sealed;

[0096] 2) Put the niobium tube containing the reactant into the quartz tube filled with argon and seal it;

[0097] 3) Put the quartz tube in a high-temperature furnace and sinter at a temperature of 750° C. for 20 hours;

[0098] 4) Grinding and mixing the sintered bulk material under the protection of argon, pressing it into tablets, putting it into a niobium tube and sealing it;

[0099] 5) Put the niobium tube into the quartz tube filled with argon and seal it;

[0100] 6) Put the quartz tube in a high-temperature furnace and s...

Embodiment 3

[0109] This embodiment provides a method for preparing a ferromagnetic semiconductor material, comprising the following steps:

[0110] 1) 3.007 grams of SrAs powder, 4.159 grams of Cd powder, 1.573 grams of As powder, 0.165 grams of Mn powder and 0.072 grams of Na 3 As powder is uniformly mixed (the atomic content ratio of Sr:Na:Cd:Mn:As is 0.925:0.075:1.85:0.15:2), and the mixture is put into a niobium tube under the protection of argon and sealed;

[0111] 2) Put the niobium tube containing the reactant into the quartz tube filled with argon and seal it;

[0112] 3) Put the quartz tube in a high-temperature furnace and sinter at a temperature of 800°C for 20 hours;

[0113] 4) Grinding and mixing the sintered bulk material under the protection of argon, pressing it into tablets, putting it into a niobium tube and sealing it;

[0114] 5) Put the niobium tube into the quartz tube filled with argon and seal it;

[0115] 6) Put the quartz tube in a high temperature furnace a...

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Abstract

The invention provides a cadmium-based ferromagnetic semiconductor material and a preparation method thereof. The chemical formula of the cadmium-based ferromagnetic semiconductor material is (Sr 1‑x Na x )(Cd 1‑y mn y ) 2 As 2 , where x and y represent the atomic content, 0.03≤x≤0.25, 0.03≤y≤0.25. The cadmium-based ferromagnetic semiconductor material of the invention has high purity, good stability, small coercive force, high ferromagnetic transition temperature and negative magnetoresistance effect.

Description

technical field [0001] The invention relates to a semiconductor material, in particular to a cadmium-based ferromagnetic semiconductor material and a preparation method thereof. Background technique [0002] The magnetic semiconductor refers to the magnetic semiconductor formed after some cations in the non-magnetic semiconductor are replaced by magnetic transition metal elements or rare earth metal ions. After the magnetic ions are doped into the semiconductor to form a magnetic semiconductor, there is an exchange coupling effect between the carrier spin and the magnetic ion spin, and the magnetic ion spin can produce ferromagnetic polarization, and the carrier is trapped in the ferromagnetic spin. In spin clusters, magnetically bound state poles are formed. With the increase of the external magnetic field, more and more internal bound magnetopolarons are destroyed, so that more carriers are released to participate in conduction. Therefore, magnetic semiconductors have un...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01F1/40H01F41/00H01L43/10
CPCH01F1/40H10N50/85
Inventor 靳常青陈碧娟邓正
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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