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Flash memory structure

A flash memory and bit line technology, applied in electrical components, transistors, electrical solid devices, etc., can solve the problems of large chip size and high chip manufacturing cost, and achieve the effect of reducing the area, increasing the storage density, and reducing the area.

Active Publication Date: 2017-04-05
WUHAN XINXIN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] In view of the above problems, the present invention provides a flash memory structure, which overcomes the problems of large chip size and high chip manufacturing cost in the prior art due to the fact that the gate, source and drain are all led out by contact holes.

Method used

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Embodiment Construction

[0034] The core idea of ​​the present invention is to set a lead line without storage function among the 8N bit lines under the same word line, and at the same time, no contact hole is set on the source electrodes of each bit line. Then, when the flash memory chip completes the setting of the gate, it can utilize a layer of photolithography layout reset to implant arsenic ions or phosphorus ions into the silicon of the first active area of ​​all bit lines and lead lines (also can be implanted by other ions or other processes, as long as all the bit lines are electrically connected to the lead wires to form a common source), the first active regions of the bit lines are electrically connected to form a common source, and in A contact hole is provided on the first active area of ​​the lead, wherein the first active area is a source.

[0035] Furthermore, only one source contact hole is required for the entire word line, thereby shortening the distance between two parallel gates....

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Abstract

The present invention provides a flash memory structure, which includes a substrate and an active region layer and a gate layer arranged on the substrate: the active region layer is provided with several bit lines arranged in parallel and perpendicular to Several word lines of the bit lines arranged in parallel; each of the word lines is electrically connected to 8N bit lines, and one of the first active regions on all the bit lines electrically connected to one of the word lines electrical connection between them; wherein, the first active region is a source, and the N is a positive integer. The flash memory structure designed by the present invention provides a common source for several bit lines on the word line by using a lead wire that does not have storage performance, so that the entire word line storage unit only needs one contact hole to connect the source. The horizontal distance between two adjacent parallel gates is reduced, thereby reducing the area of ​​a single memory cell and the area of ​​a flash memory chip, thereby increasing storage density.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a flash memory structure. Background technique [0002] Flash memory has become a research hotspot in non-volatile memory due to its convenience, high storage density, and good reliability. Since the first flash memory product came out in the 1980s, with the development of technology and the storage needs of various electronic products, flash memory has been widely used in mobile and communication devices such as mobile phones, notebooks, handheld computers and U disks. , flash memory is a kind of non-volatile memory. Its operating principle is to control the switch of the gate channel by changing the critical voltage of the transistor or memory cell to achieve the purpose of storing data, so that the data stored in the memory will not be lost due to power interruption. Disappears, and flash memory is a special structure of electrically erasable and programma...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/115H01L29/788
Inventor 周俊黄建冬洪齐元
Owner WUHAN XINXIN SEMICON MFG CO LTD