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A kind of sn-doped cro2 thin film and preparation method thereof

A thin film and substrate technology, applied in the field of Sn-doped CrO2 thin film and its preparation, can solve the problems of cumbersome process, limited application range, poor thermal stability, etc., and achieve the effect of simple operation, wide application range and improved thermal stability

Inactive Publication Date: 2016-04-13
WUHAN UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method is not only cumbersome, but also carried out in an aqueous environment, and a modifier is added, resulting in the presence of impurities in the product and low magnetization
[0004]CrO2 Although it is a magnetic material with good magnetic properties and wide application, it is in a metastable state at room temperature and has poor thermal stability
Pure CrO 2 It begins to decompose into Cr above 400°C 2 o 3 , which greatly limits its scope of application
The currently disclosed methods are only how to prepare high-purity CrO2 materials, and there is no specific preparation method for doping Sn elements into CrO2 materials to improve their thermal stability.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] A Sn-doped CrO 2 Thin films and methods for their preparation. The specific steps of the preparation method described in this embodiment are:

[0023] Step 1, first 75 ~ 80 parts of quality CrO 3 Put into the quartz boat, put 20~25 parts of SnCl 2 Put into another quartz boat, and then put the above two quartz boats into the low temperature zone of the dual temperature zone tube furnace, and put the TiO 2 The single crystal substrate is placed in the high temperature zone of the dual temperature zone tube furnace.

[0024] Step 2. Continuously feed O into the tube furnace at a flow rate of 230-250mL / min. 2 Under certain conditions, first heat the high temperature zone to 400°C~420°C, and then start the heat preservation. The end time of the heat preservation in the high temperature zone is the same as that of the low temperature zone in step 3.

[0025] Step 3. When the heat preservation is started in the high temperature area, start heating to the low temperature ...

Embodiment 2

[0029] A Sn-doped CrO 2 Thin films and methods for their preparation. The specific steps of the preparation method described in this embodiment are:

[0030] Step 1, first 80 ~ 85 parts of quality CrO 3 Put it into the quartz boat, put 15~20 parts of SnCl 2 Put into another quartz boat, and then put the above two quartz boats into the low temperature zone of the dual temperature zone tube furnace, and put the TiO 2 The single crystal substrate is placed in the high temperature zone of the dual temperature zone tube furnace.

[0031] Step 2. Continuously feed O into the tube furnace at a flow rate of 210-230mL / min 2 Under certain conditions, first heat the high temperature zone to 380°C ~ 400°C, and start the heat preservation. The end time of the heat preservation in the high temperature zone is the same as that of the low temperature zone in step 3.

[0032] Step 3. When the heat preservation is started in the high temperature area, start to heat the low temperature area...

Embodiment 3

[0036] A Sn-doped CrO 2 Thin films and methods for their preparation. The specific steps of the preparation method described in this embodiment are:

[0037] Step 1, first 85 ~ 90 parts of quality CrO 3 Put it into the quartz boat, put 10~15 parts of SnCl 2 Put into another quartz boat, and then put the above two quartz boats into the low temperature zone of the dual temperature zone tube furnace, and put the TiO 2 The single crystal substrate is placed in the high temperature zone of the dual temperature zone tube furnace.

[0038] Step 2. Continuously feed O into the tube furnace at a flow rate of 190-210mL / min 2 Under certain conditions, first heat the high temperature zone to 360°C~380°C, and then start the heat preservation. The end time of the heat preservation in the high temperature area is the same as the end time of the heat preservation in the low temperature area in step 3.

[0039] Step 3: When the heat preservation is started in the high temperature area, st...

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PUM

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Abstract

The invention specifically relates to a Sn-doped CrO2 thin film and a preparation method thereof. The technical solution is: first put 75~99.99 parts of CrO3 into the quartz boat, put 0.01~25 parts of SnCl2 into another quartz boat, and then put the above two quartz boats into the dual temperature zone tube type In the low-temperature zone of the furnace, put the TiO2 single crystal substrate into the high-temperature zone of the dual-temperature zone tube furnace; under the condition of continuous feeding of O2, first heat the high-temperature zone to 360°C~420°C, start to keep warm, and keep warm in the high-temperature zone The end time of the heat preservation in the low temperature area is the same as the end time of the heat preservation in the low temperature area; when the heat preservation is started in the high temperature area, the low temperature area is heated to 240 ° C ~ 300 ° C and kept for 2 ~ 8 hours; natural cooling, that is, Sn doped CrO2 is prepared on the single crystal substrate film. The invention has the characteristics of simple operation and rapid industrial production. The Sn-doped CrO2 thin film prepared by the method has greatly improved thermal stability under the condition of no large change in magnetic properties, and has a wide range of applications.

Description

technical field [0001] The present invention belongs to CrO 2 The field of thin film technology. Specifically related to a Sn-doped CrO 2 Thin films and methods for their preparation. Background technique [0002] In recent years, spintronics has become one of the focuses of international condensed matter physics and materials science, and has attracted extensive attention. As the simplest ferromagnetic semi-metal oxide CrO2 is the traditional magnetic recording material, CrO 2 It has been proved by experiments that the spin polarizability is close to 100%, and the Curie temperature of CrO2 is as high as 396K. Therefore, CrO2 is considered to be one of the electrode materials with great development potential and ideal spintronic devices. [0003] CrO 2 It is a metastable oxide at normal temperature and pressure, which leads to the preparation of CrO 2 Very difficult. The currently published preparation of CrO 2 The method is to decompose CrO under the condition of h...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01F41/22C23C16/40
Inventor 卢志红袁成丁轶郭芳戴明杰熊锐
Owner WUHAN UNIV OF SCI & TECH
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