A kind of algan/gan heterojunction field effect transistor

Abstract

The invention discloses a new AlGaN / GaN high electron mobility transistor with passivation layer charge compensation. This new crystal structure injects charges into the surface passivation layer between the gate and drain of the transistor to form a charge compensation layer. These charges exist on the surface of the transistor without affecting the polarization effect of the AlGaN / GaN heterojunction. It can redistribute the surface electric field through the electric field modulation effect and generate new electric field peaks, thereby reducing the high electric field at the gate edge and drain end, making the surface electric field more uniform, and improving breakdown voltage and device reliability compared to traditional structures. Significant improvements and improvements. In addition, the charge compensation function of the charge compensation layer is used to redistribute the channel carrier concentration, which can reduce the on-resistance of the device and increase the output current.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to an AlGaN / GaN heterojunction field effect transistor. Background technique [0002] Due to the limitations of the first two generations of semiconductor materials represented by Si and GaAs, the third generation of wide-bandgap semiconductor materials has developed rapidly because of their excellent performance. As one of the cores of the third-generation semiconductor materials, GaN material is special in that it has a polarization effect compared with Si, GaAs and silicon carbide (SiC). AlGaN / GaN high electron mobility transistors have been developed by taking advantage of this special performance. AlGaN / GaN HEMTs are GaN-based microelectronic devices based on AlGaN / GaN heterojunction materials. AlGaN / GaN heterojunction forms a high-density two-dimensional electron gas (2DEG) at the heterojunction interface through spontaneous polarization and piezoelectric polari...

AI Technical Summary

Problems solved by technology

[0005] In order to solve the breakdown of the device caused by the peak electric field at the gate edge of the AlGaN / GaN high electron mobility transistor in the prior art, the leakage current exceeds the predetermined range, the current collapse effect occurs, and the threshold voltage and output current of the device decrease. A series of problems such as reduced device reliability, the present invention provides a novel AlGaN / GaN heterojunction field effect transistor

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