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Method for growing graphene with controllable layer number by using organic metal compound

An organometallic and graphene technology, which is applied in the field of graphene preparation and graphene growth with controllable layers, can solve the problems of difficult control of graphene layers and poor layer uniformity, and achieve the effect of breaking through the self-limiting effect

Active Publication Date: 2014-09-10
WUXI GRAPHENE FILM +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is difficult to control the number of layers of graphene when growing graphene on the surface of metals such as Cu and Ni.
On the surface of Ni metal, due to the high solubility of carbon in Ni (2.7-6.4at% at 700-1000°C), the growth mechanism belongs to the mechanism of solid solution carbon segregation-deposition on the surface, and CVD is easy to prepare multi-layer graphite. ene, but poor layer uniformity

Method used

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  • Method for growing graphene with controllable layer number by using organic metal compound
  • Method for growing graphene with controllable layer number by using organic metal compound
  • Method for growing graphene with controllable layer number by using organic metal compound

Examples

Experimental program
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Effect test

Embodiment 1

[0028] (1) Cut the copper foil used as the substrate, put it into acetone, ethanol, and deionized water in sequence, and clean it by ultrasonic vibration for 5-10 minutes. Then take the copper foil out of the deionized water and dry it with high-purity nitrogen for later use.

[0029] (2) Put the copper foil into the LPCVD tube furnace, evacuate the air pressure in the tube to below 10-3torr, inject high-purity argon gas with a flow rate of 100sccm, raise the temperature to 1035°C, and keep it warm for 15min.

[0030] (3) Maintain 1035° C., and feed hydrogen gas at a flow rate of 100 sccm. Heat the copper acetylacetonate loaded into the evaporator to 150°C, blow the copper acetylacetonate vapor into the LPCVD tube furnace with high-purity argon gas with a flow rate of 10 sccm, and maintain the pressure inside the tube at 0.5torr. Under the double catalysis of the copper substrate and the copper atmosphere in the gas phase, the carbon-containing organic matter in the gas decom...

Embodiment 2

[0034] (1) Cut the copper foil used as the substrate, put it into acetone, ethanol, and deionized water in sequence, and clean it by ultrasonic vibration for 5-10 minutes. Then take the copper foil out of the deionized water and dry it with high-purity nitrogen for later use.

[0035] (2) Put the copper foil into the APCVD tube furnace, evacuate the air pressure in the tube to below 10-3 Torr, feed high-purity argon gas with a flow rate of 100 sccm, raise the temperature to 1050°C, and keep it for 15 minutes.

[0036] (3) Adjust the temperature to 1050° C., and maintain the flow of hydrogen gas at 100 sccm. Heat the copper acetylacetonate loaded into the evaporator to 150°C, blow the copper acetylacetonate vapor into the APCVD tube furnace with a high-purity argon gas with a flow rate of 10 sccm, and maintain the pressure in the tube at 750torr. Under the double catalysis of the copper substrate and the copper atmosphere in the gas phase, the carbon-containing organic matter ...

Embodiment 3

[0040] (1) Cut the copper foil used as the substrate, put it into acetone, ethanol, and deionized water in sequence, and clean it by ultrasonic vibration for 5-10 minutes. Then take the copper foil out of the deionized water and dry it with high-purity nitrogen for later use.

[0041](2) Put the copper foil into the LPCVD tube furnace, evacuate the air pressure in the tube to below 10-3 Torr, inject high-purity argon gas with a flow rate of 100 sccm, raise the temperature to 1050°C, and keep it for 15 minutes.

[0042] (3) The temperature was adjusted to 1035°C, and the flow rate of argon was 100 sccm. Heat the nickelocene charged into the evaporator to 175°C, blow the nickelocene vapor into the LPCVD tube furnace with a flow rate of 75 sccm of high-purity hydrogen, and maintain the pressure in the tube at 0.5 torr. Under the double catalysis of the copper substrate and the nickel atmosphere in the gas phase, the carbon-containing organic matter in the gas decomposes, nucleat...

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Abstract

The invention discloses a method for growing graphene with controllable layer number by using an organic metal compound. Volatile steam of an organic metal compound is introduced into a floating catalyst in the growth process of the graphene on a copper substrate by using a chemical vapor deposition (CVD) method, and a fresh active catalyst is lastingly provided, so that the self-limiting effect of the copper substrate is broken through, and two or more layers of graphene with uniform layer number can be prepared in a controllable manner on the copper substrate by optimizing the technological parameters, such as temperature, pressure, time, species and flow of carrier gases and carbon source gases, and the like.

Description

technical field [0001] The invention belongs to the field preparation of photoelectric materials, and relates to a method for preparing graphene, in particular to a method for growing graphene with a controllable layer number. Background technique [0002] Chemical vapor deposition (Chemical Vapor Deposition, CVD) is the most cost-effective technical approach to prepare graphene thin films. Large-area graphene films can be prepared on Cu, Ni and other metal surfaces, and can be transferred to various substrate surfaces. However, it is difficult to control the number of graphene layers when growing graphene on the surface of metals such as Cu and Ni. On the surface of Ni metal, due to the high solubility of carbon in Ni (2.7-6.4at% at 700-1000°C), the growth mechanism belongs to the mechanism of solid solution carbon segregation-deposition on the surface, and CVD is easy to prepare multi-layer graphite. ene, but the layer uniformity is poor. On the copper surface, due to t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04C01B32/186
Inventor 廖威金玲蒋健伟
Owner WUXI GRAPHENE FILM