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MEMS integrated pressure sensor devices having isotropic cavities and methods of forming same

An isotropic and device technology, applied in the direction of electric solid-state devices, semiconductor devices, manufacturing microstructure devices, etc.

Active Publication Date: 2014-09-17
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In particular, integrating MEMS pressure sensing devices with other MEMS devices (e.g., motion sensing devices) into the same integrated circuit fabrication process has been challenging

Method used

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  • MEMS integrated pressure sensor devices having isotropic cavities and methods of forming same
  • MEMS integrated pressure sensor devices having isotropic cavities and methods of forming same
  • MEMS integrated pressure sensor devices having isotropic cavities and methods of forming same

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Embodiment Construction

[0029] The making and using of embodiments of the invention are discussed in detail below. It should be appreciated, however, that the present invention provides many applicable inventive concepts that can be embodied in a wide variety of specific contexts. The specific embodiments discussed are merely illustrative of specific ways to make and use the presently disclosed subject matter, and do not limit the scope of the various embodiments of the invention.

[0030] Figure 1A to Figure 1AC A cross-sectional view of a portion of a MEMS device 100 including a pressure sensor 404 and another device 406 is shown at an intermediate stage of fabrication (see Figure 1AC ). Device 406 may be a MEMS motion sensor, gyroscope, accelerometer, or the like. The fabrication of pressure sensor 404 and device 406 uses the same integrated circuit (IC) process to form sealed cavities (ie, cavities 408 and 410 ) and ambient openings (ie, opening 208A) in MEMS device 100 . therefore, Figure ...

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Abstract

A method embodiment includes providing a MEMS wafer comprising an oxide layer, a MEMS substrate, a polysilicon layer. A carrier wafer comprising a first cavity formed using isotropic etching is bonded to the MEMS, wherein the first cavity is aligned with an exposed first portion of the polysilicon layer. The MEMS substrate is patterned, and portions of the sacrificial oxide layer are removed to form a first and second MEMS structure. A cap wafer including a second cavity is bonded to the MEMS wafer, wherein the bonding creates a first sealed cavity including the second cavity aligned to the first MEMS structure, and wherein the second MEMS structure is disposed between a second portion of the polysilicon layer and the cap wafer. Portions of the carrier wafer are removed so that first cavity acts as a channel to ambient pressure for the first MEMS structure.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to U.S. Provisional Application No. 61 / 784,019, entitled "MEMS Pressure and Motion Sensor Devices Having Isotropic Cavities and Mthods of Forming Same," filed March 14, 2013, the contents of which are incorporated herein by reference . [0003] This application is related to the following co-pending and commonly assigned patent applications filed on the same date: "MEMS Integrated Pressure Sensor Devices and Methods of Forming Same" (Attorney Docket TSM13-0152); "MEMS Integrated Pressure Sensor and Microphone Devices and Methods of Forming Same” (Agent Docket No. TSM13-0153); “MEMS Integrated Pressure Sensor and Microphone Devices having Through-Vias and Methods of Forming Same” (Agent Docket No. ” (Acting Docket No. TSM13-0175). technical field [0004] The invention relates to a MEMS integrated pressure sensing device with an isotropic cavity and a manufacturing method thereof. Back...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00B81B7/00
CPCB81C1/00182H01L24/83B81B7/0041H01L24/29B81B7/02H01L2224/29011B81C2201/019H01L2924/1461H01L2224/29144H01L2224/83805H01L2224/29013B81C2203/0792H01L2224/83193B81B2201/0264H01L2224/29124B81C1/00238H01L2224/291H01L2224/32145B81C2203/0118B81B2201/025H01L2924/0002H01L23/10H01L25/50H01L24/32B81C1/00293H01L2924/01322H01L2224/3012H01L2924/00012H01L2924/01029H01L2924/00B81B2201/0235B81B2201/0242B81B2203/0127B81B2203/0315B81C2201/013
Inventor 朱家骅郑钧文
Owner TAIWAN SEMICON MFG CO LTD