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Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same

A nanoparticle and heterojunction technology, applied in nanotechnology, nanooptics, nanotechnology, etc., can solve the problems of hindering the carrier injection process, large band gap and energy band shift, etc.

Active Publication Date: 2014-09-17
THE UNIV OF ILLINOIS THE OFFICE OF TECH MANAGEMENT +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, for certain combinations of materials, the effective bandgap and band shift can be large, potentially hindering the carrier injection process

Method used

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  • Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same
  • Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same
  • Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0068] This example illustrates the preparation of passivated nanoparticles. Response to N 2 Carried out under atmosphere in a standard Schlenk line setup. Technical grade trioctylphosphine oxide (TOPO) (90%), technical grade trioctylphosphine (TOP) (90%), technical grade octylamine (OA) (90%), technical grade octadecene (ODE ) (90%), CdO (99.5%), zinc acetate (99.99%), S powder (99.998%) and Se powder (99.99%) were purchased from Sigma Aldrich. N-octadecylphosphonic acid (ODPA) was purchased from PCI Synthesis. ACS grade chloroform and methanol were purchased from Fischer Scientific. The material was used directly without treatment.

[0069] Preparation of One-dimensional Nanoparticles-CdS Nanorods

[0070] First, 2.0 grams (g) (5.2 millimoles (mmol)) of TOPO, 0.67 g (2.0 mmol) of ODPA, and 0.13 g (2.0 mmol) of CdO were prepared in a 50-mL three-necked round-bottom flask. The mixture was degassed at 150°C under vacuum for 30 minutes (min), then heated to 350°C with stir...

Embodiment 2

[0078] This example serves to illustrate the use of the nanoparticles in electroluminescent devices. use Figure 4 devices shown in. The device 300 includes a glass substrate 302, a first electrode 304 comprising indium tin oxide, a hole injection layer 306 comprising PEDOT:PSS, a hole transport layer 308 comprising TFB, and a nanoparticle layer 310 (substances contained in it are as follows ), an electron transport layer 312 comprising zinc oxide nanoparticles, and a second electrode 314 comprising aluminum.

[0079] The nanoparticle layer 310 comprises nanoparticles as described herein (CdS nanorods passivated by a first end cap comprising CdSe and a second end cap comprising ZnSe), or a comparative material (the comparative material Contains core-shell quantum dots, where the core is CdSe and the shell is ZnSe).

[0080] The EL properties of EL devices containing various materials are shown in FIG. 5 . Figure 5(A) shows the EL spectra of core-shell (CdSe / ZnS) quantum do...

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Abstract

Disclosed herein is a semiconducting nanoparticle (100) comprising a one-dimensional semiconducting nanoparticle (102), for example a nanowire, having a first end and a second end; where the second end is opposed to the first end; and two first endcaps (108), one of which contacts the first end and the other of which contacts the second end respectively of the one-dimensional semiconducting nanoparticle; where the first endcap that contacts the first end comprises a first semiconductor and where the first endcap extends from the first end of the one-dimensional semiconducting nanoparticle to form a first nanocrystal heterojunction (103); where the first endcap that contacts the second end comprises a second semiconductor; where the first endcap extends from the second end of the one-dimensional semiconducting nanoparticle to form a second nanocrystal heterojunction (103); and where the first semiconductor and the second semiconductor are chemically different from each other.

Description

Background technique [0001] The present invention relates to double heterojunction nanoparticles, methods for their preparation and articles comprising the nanoparticles. [0002] A key advantage of semiconductor nanocrystals is their potential use to improve the efficiency of optoelectronic devices. Spherical nanocrystalline heterostructures, sometimes called core-shell quantum dots, are widely used in quantum dot light-emitting diodes (LEDs). In these core-shell heterostructures mainly composed of type I (straddled) band shifts, the heterojunction only functions as a passivation layer, thereby improving the photoluminescence efficiency. Due to their unique optical and electronic properties, semiconductor nanocrystals have attracted considerable attention in various optoelectronic applications, including photovoltaics (PV), LEDs, solid-state lighting, and displays. These small crystals have one or more dimensions and are a few nanometers in length, making it possible to tun...

Claims

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Application Information

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IPC IPC(8): C09K11/88H01L51/54H01L51/56B82Y30/00B82Y20/00
CPCB82Y10/00H01L21/02603H01L29/0669H01L31/035218B82Y40/00H01L29/068H01L21/02606H01L31/035227H01L29/127H01L31/0296H01L21/02601H01L33/502H01L33/06H01L33/18B82Y30/00H01L21/02557H01L21/0256H01L21/02628Y10S977/762Y10S977/825Y10S977/949H10K85/146H10K85/1135H10K50/115H10K50/16H10K2102/331B82Y20/00H01L29/125H01L29/225H01L31/1828H01L33/0083H01L33/28
Inventor M·沈N·吴Y·翟S·南P·特雷福纳斯K·德什潘德
Owner THE UNIV OF ILLINOIS THE OFFICE OF TECH MANAGEMENT