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A semiconductor material baf x znas and preparation method thereof

A semiconductor and crystal structure technology, applied in polycrystalline material growth, chemical instruments and methods, self-solid, etc., can solve the problems of difficult stable existence, poor stability, difficult high purity of semiconductor materials, etc., and achieve good stability

Active Publication Date: 2016-08-03
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, these four semiconductor materials with the ZrCuSiAs structure are difficult to prepare with high purity, and have poor stability, making it difficult to exist stably in the air.

Method used

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  • A semiconductor material baf <sub>x</sub> znas and preparation method thereof
  • A semiconductor material baf <sub>x</sub> znas and preparation method thereof
  • A semiconductor material baf <sub>x</sub> znas and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] This embodiment provides a method for preparing a semiconductor material, including:

[0042] 1) Dissolve 1.753 g of BaF in an argon-filled glove box 2 Powder, 4.119 grams of Ba block, 2.616 grams of Zn powder, and 2.996 grams of As powder were uniformly mixed, and the mixture was pressed into an alumina ceramic test tube;

[0043] 2) Vacuum seal the ceramic test tube with the sample in the quartz tube, fill the quartz tube with argon and seal it;

[0044] 3) Sinter the quartz tube in a high temperature furnace at 600°C for 20 hours. After the sintering is completed, the semiconductor material BaF is obtained. 0.5 ZnAs.

[0045] The X-ray diffraction pattern of the sample is as figure 1 shown, from figure 1 It can be seen that all the diffraction peaks of this sample can find the corresponding diffraction index, and there is no impurity, indicating that the method provided in this example has prepared a high-purity semiconductor material BaF 0.5 ZnAs, crystal struc...

Embodiment 2

[0048] This embodiment provides a method for preparing a semiconductor material, including:

[0049] 1) Dissolve 2.6295 g of BaF in an argon-filled glove box 2 powder, 0.6865 g of Ba block, 1.308 g of Zn powder, and 1.498 g of As powder were evenly mixed, and the mixture was put into an alumina ceramic test tube;

[0050] 2) Vacuum seal the ceramic test tube with the sample in the quartz tube, fill the quartz tube with argon and seal it;

[0051] 3) Sinter the quartz tube in a high temperature furnace at 1000°C for 5 hours. After the sintering is completed, the semiconductor material BaF is obtained. 1.5 ZnAs.

[0052] The X-ray diffraction pattern of the sample is as Figure 5 shown, from Figure 5 It can be seen that all the diffraction peaks of this sample can find the corresponding diffraction index, and there is no impurity phase, indicating that the method provided in this example has prepared a high-purity semiconductor material BaF 1.5 ZnAs, crystal structure as f...

Embodiment 3

[0054] This embodiment provides a method for preparing a semiconductor material, including:

[0055] 1) Dissolve 2.804 g of BaF in an argon-filled glove box 2 Powder, 3.2952 grams of Ba block, 2.616 grams of Zn powder, and 2.996 grams of As powder are evenly mixed, and the mixture is packed into a niobium tube, and the niobium tube is sealed under the protection of an inert gas;

[0056] 2) Vacuum seal the niobium tube with the sample in the quartz tube, fill the quartz tube with argon and seal it;

[0057] 3) Sinter the quartz tube at a temperature of 900°C in a high-temperature furnace for 20 hours;

[0058] 4) After the sintering is completed, the obtained sample is ground, mixed and pressed into tablets under the protection of argon gas, and put into a niobium tube, and the niobium tube is sealed under the protection of argon gas;

[0059] 5) Vacuum seal the niobium tube with the sample in the quartz tube, fill the quartz tube with argon and seal it;

[0060] 6) Sinter ...

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Abstract

The invention provides a semiconductor material whose chemical formula is BaF x ZnAs, where 0.5≤x≤1.5. The present invention also provides a method for preparing the above-mentioned material, using a solid-state reaction method to sinter the precursor, wherein the precursor includes BaF 2 , Ba, Zn and As, the content of various substances in the precursor is such that the atomic percentage content of various elements satisfies Ba:F:Zn:As=1:x:1:1, and the sintering temperature is 600-1000°C .

Description

technical field [0001] The invention relates to a semiconductor material with a ZrCuSiAs structure, in particular to a semiconductor material BaF with a ZrCuSiAs structure x ZnAs and its preparation method. Background technique [0002] The design of inorganic compounds is a daunting task in materials science. Real-world examples of well-designed compounds are still rare, one of the main reasons being that it is difficult to predict the structure of new compounds. ZrCuSiAs-type quaternary layered compounds have aroused great interest in materials scientists and physicists in recent years due to their rich physical and chemical properties. This type of compound is composed of atomic layers similar to ZrSi layer and CuAs layer stacked in the c-axis direction, and the space group is P4 / nmm. Among them, iron-based, cobalt-based, nickel-based and copper-based compounds have been extensively studied, and iron-based, cobalt-based and nickel-based superconductors and copper-based...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/10C30B1/10
Inventor 陈碧娟邓正靳常青
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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