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External cavity model-locked beam combination device and method for LDA (Laser Diode Array)

A technology of mode-locking and beam, which is applied to laser components, optics, instruments, etc., can solve the problems of poor output beam quality and low brightness

Inactive Publication Date: 2014-11-05
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

[0006] In order to overcome the defects existing in the prior art, the present invention proposes an LDA external cavity mode-locking wavelength beam combining device and method, which mainly solves the problems of poor quality and low brightness of the output beam in the direction of the slow axis of the LDA

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  • External cavity model-locked beam combination device and method for LDA (Laser Diode Array)
  • External cavity model-locked beam combination device and method for LDA (Laser Diode Array)
  • External cavity model-locked beam combination device and method for LDA (Laser Diode Array)

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Embodiment Construction

[0016] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0017] The external cavity mode-locked wavelength beam combining device and method for LDA proposed by the present invention utilizes the frequency selection characteristics and dispersion characteristics of the diffraction grating to perform external cavity mode-locking and wavelength beam combining on the output beam of the LDA, so that the quality of the output beam is basically Equal to the beam quality of a single luminous area, but the output power increases proportionally to the number of luminous areas.

[0018] The external cavity mode-locked wavelength beam combining device for LDA according to the present invention mainly includes three parts: LDA light source, shaping mirror group and diffraction grating.

[0...

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Abstract

The invention discloses a beam shaping device for an LDA (Laser Diode Array). The device comprises an LDA, a shaping lens groups, a diffraction grating and an output coupling mirror, wherein the LDA comprises a plurality of light emitting regions provided effective grains for an external cavity locking model; the shaping lens groups is mainly used for performing beam shaping such collimation and focusing and light path conversion on output light beams from the LDA; the diffraction grating has functions of locking a model and wavelength beam combination; and the output coupling mirror has a certain reflection rate and is used for originally returning the light beams partially subjected to beam combination and locking the model. According to the scheme disclosed by the invention, the output light beams from the plurality of light emitting regions can be combined into one beam, the quality of the output light beams of the LDA is basically equal to the light beam quantity of a single light emitting unit, the problem of low output brightness of the LDA is solved, and the application range of the beam shaping device for the LDA is substantially expanded.

Description

technical field [0001] The present invention relates to the technical field of semiconductor lasers, in particular to an external cavity mode-locked wavelength beam combining device and method for LDA (Laser Diode Array, semiconductor laser array). Background technique [0002] Semiconductor lasers have the advantages of small size, light weight, and high electro-optical conversion efficiency, and have been widely used in many fields. It is difficult to increase the output power of a single semiconductor laser tube, usually only about ten watts. In order to increase its output power, multiple semiconductor lasers are usually fabricated together to form a semiconductor laser array (Laser Diode Array, LDA). The output power of high-power LDA can reach hundreds of watts, but the output beam quality of LDA is poor. Diffraction-limited beam, but the divergence angle is very large, about 60 degrees; the output beam quality in the slow axis direction (parallel to the PN junction d...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/065G02B27/10
Inventor 赵懿昊王翠鸾刘素平马骁宇
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI