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High-speed silicon-based photo-detector

A photodetector, silicon-based technology, applied in the field of photodetectors, can solve problems such as slow photoelectric conversion speed

Active Publication Date: 2014-11-19
上海硅通半导体技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to propose a new silicon-based photodetector structure to solve the problem of slow photoelectric conversion speed of traditional silicon-based photodetectors

Method used

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Embodiment Construction

[0027] Below by specific embodiment and in conjunction with accompanying drawing, the present invention is described in detail:

[0028] Silicon-based photodetectors have been widely used in imaging systems (digital cameras) and automatic control fields. figure 1 A schematic diagram of the chip cross-section in the silicon-based CMOS process is given, and several commonly used silicon-based photodiode structures are marked.

[0029] figure 1 Among them, on the P-type heavily doped substrate 11, a P-type lightly doped layer 12 is formed by epitaxy. The impurity region is the P well 12, the NMOS transistor is in the P well, and is composed of the polysilicon gate 17, the source-drain N-type doped region 18, and the P well 12, and the PMOS transistor is in the N well, consisting of the polysilicon gate 17. Composed of source and drain P-type doped regions 15 and N well 14.

[0030] The diode that can be used as a photodetector is most commonly used as N+ / P-sub / P+sub19, and the...

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Abstract

The invention discloses a silicon-based photo-detector based on a SiGe HBT (germanium-silicon heterojunction bipolar transistor). In one embodiment, the silicon-based photo-detector comprises an N-type buried layer (NBL), a nearly intrinsic doped P-type area (collector area) disposed on the NBL, and a SiGe single crystalline layer (base area) disposed on the Collector area. The SiGe single crystalline layer is P-type doped. The Collector area is an active area of the photo-detector, incident photons generate photoproduction carriers therein, and the photoproduction carriers are collected by a PIN tube which is reversely biased and is composed of a P-type SiGe monocrystalline, an intrinsic type Collector area and an NBL area, and photoelectric currents are formed in an external circuit. In another embodiment, N-type doped polysilicon grows above the P-type SiGe single crystalline layer and is similar to an emitter in an HBT. In other embodiments, an emitter layer is composed of N-type SiGe monocrystalline which continuously grows on the P-type SiGe monocrystalline area.

Description

technical field [0001] The invention relates to a photodetector, especially a photodetector based on silicon-based materials and techniques. Background technique [0002] Silicon-based photodetectors are usually used in various photosensitive devices, such as photodiodes and triodes, which are sensitive to visible light and short-wavelength infrared light, and are widely used in the fields of automatic control, imaging devices, and optical coding. However, the response speed of these traditional silicon-based photodetectors is generally slow and cannot be applied in the field of optical communication. [0003] The main reason for the slow response speed is that the silicon material has a long absorption length for short-wavelength infrared light, so the active region of the photosensitive diode is required to be long, resulting in a long transit time of photogenerated carriers. [0004] In addition, silicon-based photodetectors cannot always be monolithically integrated wit...

Claims

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Application Information

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IPC IPC(8): H01L31/101H01L27/144
CPCH01L27/1443H01L31/0352H01L31/1105
Inventor 李冰
Owner 上海硅通半导体技术有限公司