Method for Improving Reliability of Semiconductor Devices in Interconnection Processes

Abstract

The invention provides a method for improving reliability of a semiconductor device of an interconnection process. According to the invention, a top layer interconnection structure-based dielectric substance layer containing a first plasma enhance oxide (PEOX) layer and a second PEOX layer arranged on the first PEOX layer is formed by two steps, wherein the energy and deposition rate for forming the first PEOX layer are lower than the energy and deposition rate for forming the second PEOX layer, so that compared with the second PEOX layer, the first PEOX layer has the higher compactness and higher pressure stress. Because a metal tensile stress is exerted on an ultra-low k value-contained intermetallic dielectric substance of the previous interconnection structure directly under the top layer interconnection structure for top layer interconnection structure preparation, the first PEOX layer has the higher pressure stress to eliminate the metal tensile stress well, thereby reducing the damages on the ultra-low k value-contained intermetallic dielectric substance due to the metal tensile stress. Therefore, the leakage current is reduced and performances of puncture voltage and electromigration and the like of the device can be improved, thereby improving performances of electrical performance testing and reliability of the device and enhancing the device yield.

Description

technical field [0001] The invention belongs to the interconnection technology of semiconductor manufacturing process in the field of semiconductor manufacturing process, and relates to a method for improving the reliability of semiconductor devices in the interconnection process, in particular to a related preparation method of a top-level interconnection structure in the semiconductor device interconnection process. Background technique [0002] With the continuous reduction of the size of semiconductor devices, the interconnection structure is becoming narrower and narrower, and the space between the metal wiring is gradually shrinking, so the intermetal dielectric (intermetal dielectric) used to isolate the metal wiring -metal dielectric, IMD) is also becoming thinner, resulting in the possibility of adverse interaction or crosstalk between metal wiring. [0003] It has been found that reducing the dielectric constant (k) of the intermetallic dielectric used to isolate t...

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Problems solved by technology

[0007] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a method for improving the reliability of semiconductor devices in the interconnection process, which is used to solve the problem of the previous interconnection structure under the top-level metal interconnection structure in the prior art. The low-k value intermetallic dielectric is easily damaged, and further solves the problem of reduced reliability of semiconductor devices in the interconnection process

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