Hybrid Semiconductor Package
A semiconductor and bonding wire technology, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve the problems of reducing electrical conductivity and thermal conductivity
Active Publication Date: 2017-11-24
沃孚半导体公司
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- Abstract
- Description
- Claims
- Application Information
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Problems solved by technology
However, aluminum bonding wires have reduced electrical and thermal conductivity compared to copper and gold bonding wires
Method used
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[0013] According to embodiments described herein, a semiconductor package includes a bond wire or ribbon that is expected to exceed a certain temperature during operation of a transistor die included in the package. These bonding wires or ribbons are made of gold. Other bond wires or ribbons that are included in the package and are expected to be kept at lower temperatures are made of materials other than gold, such as aluminum or copper. In this way, bond wires or ribbons designed to be hottest during device operation can handle relatively high operating temperatures during the lifetime of the device without failure and / or oxidation. The remaining bond wires or ribbons are made of less expensive materials that can reliably operate at lower temperatures during the lifetime of the device.
[0014] Bonding wires generally have a (generally) circular cross-section and bonding ribbons generally have a (generally) rectangular cross-section. Various standard bonding techniques suc...
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The semiconductor package includes a substrate, an RF semiconductor die attached to a first side of the substrate, a capacitor attached to the first side of the substrate, and a first terminal on the first side of the substrate. The semiconductor package further includes a copper or aluminum bond wire or strap connecting the first terminal to the output of the RF semiconductor die and a gold bond wire or strap connecting the capacitor to the output of the RF semiconductor die. Gold bonding wires or ribbons are designed to accommodate higher RF Joule heating during operation of the RF semiconductor die compared to copper or aluminum bonding wires or ribbons. A corresponding manufacturing method is also described.
Description
technical field [0001] The present application relates to semiconductor packages, and more particularly to semiconductor packages having bond wires or ribbons designed for different maximum operating temperatures. Background technique [0002] For RF semiconductor packaging, high reliability, low cost bonding wires are desired. The bond wires for this package are usually made of gold, aluminum or copper. Some of these bond wires are used as tuning wires to connect to the output matching network of the RF power device. The tuning wires experience significantly higher temperatures than other bond wires included in the package for input and output connections. For example, due to RF Joule heating (i.e., ohmic heating and resistive heating), the temperature of the tuning wires typically exceeds about 150°C to 160°C, and in certain applications even 200°C, thus serving as a measure of current passing through the wires at RF frequencies. As a result, the tuning wires release he...
Claims
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IPC IPC(8): H01L23/31H01L23/49H01L21/60H01L21/50
CPCH01L23/047H01L23/057H01L23/315H01L23/66H01L2224/4909H01L24/48H01L24/49H01L2224/45014H01L2224/48247H01L2224/4903H01L2224/49051H01L2224/49175H01L2224/49505H01L2224/45124H01L2224/45144H01L2224/45147H01L2224/45565H01L2924/181H01L2224/85H01L2223/6611H01L2223/6655H01L2924/00014H01L24/45H01L2224/45015H01L2224/48472H01L2224/84801H01L2224/37124H01L2224/37147H01L2224/83801H01L24/37H01L2224/37599H01L24/85H01L24/84H01L2224/45664H01L2924/00H01L2224/05599H01L2924/01204H01L2924/206H01L2224/73221H01L24/73H01L24/36H02M7/003H04B1/44H01L23/34H01L23/50
Inventor A·科姆波施B·W·康戴E·奥雷乔拉M·瑞尔
Owner 沃孚半导体公司