Manufacturing method of solar cell unit

A technology of solar cells and manufacturing methods, which is applied in the direction of electrical components, final product manufacturing, sustainable manufacturing/processing, etc., and can solve problems such as hindering carrier movement and decreasing power generation efficiency

Inactive Publication Date: 2014-12-03
SUMITOMO HEAVY IND LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existence of such a peak of impurity concentration hinders the movement of carriers, which is one of the causes of the decrease in power generation efficiency.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of solar cell unit
  • Manufacturing method of solar cell unit
  • Manufacturing method of solar cell unit

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment approach

[0025] Solar cells are designed in many types. For example, a crystalline Si-based solar cell secures superiority over other types of solar cells by its simple structure and fabrication method, high conversion efficiency, and the like. On the other hand, in order to obtain a higher conversion efficiency in a crystalline Si-based solar cell, it is important to identify the most suitable condition pair for each process unit. Among them, the formation of the surface emitter layer by the photoelectric effect is considered to be a very important element, and it is considered that the following characteristics are preferable.

[0026] However, both the thermal diffusion method and the ion implantation method, which are currently used as general manufacturing methods, are difficult to satisfy the following characteristics at the same time due to their characteristics.

[0027] (1) Shallow junction. Specifically, the internal diffusion potential is brought closer to the surface.

...

no. 2 Embodiment approach

[0052] In this embodiment, the case where an antireflection film is used as a screen film will be described. Image 6 It is a flowchart of the manufacturing method of the solar cell which concerns on 2nd Embodiment. Figure 7 (a)~ Figure 7 (e) is a schematic cross-sectional view of the semiconductor substrate in each step of the method of manufacturing a solar cell according to the second embodiment. In addition, the same code|symbol is attached|subjected to the same structural element or process as 1st Embodiment, and description is abbreviate|omitted suitably.

[0053] First, as Figure 7 As shown in (a), a texture ( Image 6 S10). Then, as Figure 7 As shown in (b), SiN or TiO is formed on the surface of the silicon substrate 10 by a CVD method or the like 2 Equal anti-reflection film 16 ( Image 6 S24). The thickness of the antireflection film 16 is, for example, about 10 to 100 nm. Thus, a solar cell substrate having a p-type (first conductivity type) silicon su...

no. 3 Embodiment approach

[0060] In the present embodiment, an anti-reflection film is used as the panel film, and a case where a contact region is formed in addition to the emitter layer will be described. Figure 8 It is a flowchart of the manufacturing method of the solar cell which concerns on 3rd Embodiment. Figure 9 (a)~ Figure 9 (e) is a schematic cross-sectional view of the semiconductor substrate in each step of the method of manufacturing a solar cell according to the third embodiment. Figure 10 (a)~ Figure 10 (b) is a schematic cross-sectional view of a semiconductor substrate in each step of the method of manufacturing a solar cell according to the third embodiment. In addition, the same code|symbol is attached|subjected to the same structural element and process as each said embodiment, and description is abbreviate|omitted suitably.

[0061] First, as Figure 9 As shown in (a), a texture ( Figure 8 S10). Then, as Figure 9 As shown in (b), SiN or TiO is formed on the surface o...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a manufacturing method of a solar cell unit which is a new solar cell unit manufacturing method by the utilization of an ion injection method. One mode of the manufacturing method of the solar cell unit comprises the steps of: a preparatory process for processing a silicon layer in a first conductive form and a substrate which covers a cladding film of a silicon layer and is used for the solar cell unit; and an emitting electrode layer forming process, in which ions in a second form are irradiated to the silicon layer through the cladding film, and an emitting electrode layer is formed on one part of region on an illuminated surface side of the silicon layer. In the emitting electrode layer forming process, the energy for ion irradiation meets the condition that the stroke of the ions is the distance from the surface of the cladding film to the interface between the cladding film and the silicon layer.

Description

technical field [0001] This application claims priority based on Japanese Patent Application No. 2013-110595 filed on May 27, 2013. The entire content of this application is incorporated into this specification by reference. [0002] The present invention relates to a method of manufacturing a solar cell. Background technique [0003] In a solar cell, the electron-hole pair generated when a semiconductor material such as silicon absorbs light passes through the electric field generated by the pn junction formed inside the cell, and the electron moves to the n-layer side and the hole moves to the p-layer side. External circuit output. When forming a pn junction or a contact layer, it is necessary to locally perform a treatment of different concentrations or types of impurities. In addition, an antireflection film is formed on the light-receiving surface side of the silicon substrate in order to increase the light absorbed inside the solar cell as much as possible. [0004...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L21/265
CPCH01L21/263H01L31/1804Y02E10/547Y02P70/50
Inventor 曾我知洋
Owner SUMITOMO HEAVY IND LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap