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Light-emitting-diode chip

A technology of light-emitting diodes and chips, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of total reflection and low light extraction efficiency of semiconductor epitaxial structures.

Inactive Publication Date: 2014-12-03
ZHANJING TECH SHENZHEN +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the large difference between the refractive index of the transparent conductive layer and the protective layer, when light passes through the transparent conductive layer and reaches the protective layer, it is easy to cause total reflection, resulting in low light extraction efficiency of the semiconductor epitaxy structure.

Method used

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  • Light-emitting-diode chip
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  • Light-emitting-diode chip

Examples

Experimental program
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Embodiment Construction

[0011] figure 1 Shown is the LED chip 100 provided by the first embodiment of the present invention. The LED chip 100 includes an N-type semiconductor layer 20, an active layer 30, a P-type semiconductor layer 40, a transparent conductive layer 50, an N-type electrode 60 formed on the N-type semiconductor layer 20, and an N-type semiconductor layer formed on the substrate 10. The P-type electrode 70 and the protective layer 80 on the P-type semiconductor layer 40 .

[0012] The N-type semiconductor layer 20 is formed with a mesa structure 21 . The active layer 30 is disposed on the N-type semiconductor layer 20 and exposes the platform structure 21 . The platform structure 21 has an exposed surface 211 away from the substrate 10 .

[0013] The P-type semiconductor layer 40 is formed on the active layer 30 , and the transparent conductive layer 50 is formed on the P-type semiconductor layer 40 . In this embodiment, the transparent conductive layer 50 is an indium tin oxide ...

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Abstract

A light emitting diode (LED) die includes a first semiconductor layer, a second semiconductor layer, an active layer interposed between the first and second semiconductor layers, a transparent electrically conductive layer formed on the second semiconductor layer, and a passivation layer formed on the transparent electrically conductive layer. A first electrode is electrically connected with the first semiconductor layer, and a second electrode is is electrically connected with the second semiconductor layer. The transparent electrically conductive layer is made of tin doped indium oxide. The passivation layer is made of silicon nitride having a refractive index close to that of the transparent electrically conductive layer.

Description

technical field [0001] The invention relates to a semiconductor structure, in particular to a light emitting diode chip. Background technique [0002] A general light-emitting diode chip includes a first-type semiconductor layer, an active layer, a second-type semiconductor layer, a transparent conductive layer, a protective layer and electrodes grown sequentially on a substrate. Usually, the protective layer is a silicon dioxide layer, and its refractive index is 1.44~1.55. The transparent conductive layer is an indium tin oxide (ITO) film with a refractive index of 1.8-2.1. Since the refractive index of the transparent conductive layer is quite different from that of the protective layer, total reflection is likely to occur when the light passes through the transparent conductive layer and reaches the protective layer, resulting in low light extraction efficiency of the semiconductor epitaxial structure. Contents of the invention [0003] In view of this, it is necessa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/44
CPCH01L33/22H01L33/58H01L33/42H01L33/44H01L33/38
Inventor 洪梓健沈佳辉彭建忠
Owner ZHANJING TECH SHENZHEN