156 results about "Tin doping" patented technology

A transparent conductive film has a high-refractive index layer, a low-refractive index layer and a tin-doped indium oxide layer (ITO layer) which are laminated in order on a first main surface of a polyester film. The high-refractive index layer is composed of metal oxide particles and ultraviolet curing adhesives. When the wavelength is 400nm, the refractive index of the high-refractive index layer is 1.63-1.86, and the thickness of the high-refractive index layer is 40-90nm. When the wavelength is 400nm, the refractive index of the low-refractive index layer is 1.33-1.53, and the thickness of the low-refractive index layer is 10-50nm. When the wavelength is 400nm, the refractive index of the ITO layer is 1.85-2.35, and the thickness of the ITO layer is 5-50nm.

A heat ray-shielding material including a heat ray-shielding layer which includes flat silver particles and metal oxide particles is provided. Preferable aspects include: an aspect of the metal oxide particles including tin-doped indium oxide particles; an aspect of the heat ray-shielding layer including flat silver particles and metal oxide particles mixed and dispersed in a binder; and an aspect of the heat ray-shielding layer including a flat silver particle-containing layer including the flat silver particles and a metal oxide particle-containing layer including the metal oxide particles laminated therein.

The invention relates to the deposition of transparent conducting thin films, such as transparent conducting oxides (TCO) such as tin doped indium oxide (ITO) and aluminum doped zinc oxide (AZO) on flexible substrates by pulsed laser deposition. The coated substrates are used to construct low cost, lightweight, flexible displays based on organic light emitting diodes (OLEDs).

The invention relates to a method for preparing tin-doped spinel lithium-rich lithium manganate cathode material by using two-stage sintering process, which is characterized in that the compounds of lithium, manganese and tin are respectively weighted according to mol ratio of lithium ion to manganese ion to tin ion with (0.95<=x<=1.06): (1.05<=y<=1.25): (0.05<=z<=0.21), the weighted compound can be mixed, a wet grinding medium is added, a predecessor 2 is prepared through the steps of wet grinding and drying, and the predecessor 2 is prepared to a tin-doped spinel lithium-rich lithium manganate cathode material by using a two-stage sintering process. The cost of raw materials in the present invention is low, the stability of sample structure can be improved by doping tin, discharge capacity is increased, so that good base can be established for industrialization.

A resin composition includes a binder component having at least one of a monomer and an oligomer of one or more of a fluorine system and a silicone system having a polymerizable functional group in a molecule. The resin composition also includes fine metal oxide particles, and a polymerization initiator. The fine metal oxide particles include particles selected from the group of zinc oxide, indium oxide, tin oxide, antimony oxide, tin-doped indium oxide (ITO), antimony-doped tin oxide (ATO), zinc-doped indium oxide (IZO), aluminum-doped zinc oxide (AZO), and fluorine-doped tin oxide (FTO).

The invention discloses a preparation method of a tin/carbon composite nano fiber film cathode material. In the method, a tin-doped carbon-based nano fiber film obtained by an electrostatic spinning method is thermally drawn in a certain temperature range at a drawing rate of 5-60%, and is sequentially preoxidated and carburized to ultimately obtain the required cathode material. After the thermal drawing, the electrochemical performance of the tin/carbon composite film material is obviously improved, the specific capacity and the cycle performance of a battery are effectively enhanced, and the coulomb efficiency is more than 90% after 30 cycles. Besides, the method also has the advantages of simple and feasible operation, easy process control, moderate condition and the like.

Provided are a polycarbonate resin composition including the following substances in a specific proportion: a polycarbonate, a fine particle of antimony-doped tin oxide (ATO) treated with a polymeric dispersant and/or a fine particle of tin-doped indium oxide (ITO) treated with a polymeric dispersant, and a reactive silicone compound having one or more alkoxy groups and a phenyl group in a molecule thereof, and a molded plate formed by subjecting the polycarbonate resin composition to an injection molding or an extrusion molding. That is, the polycarbonate resin composition which shields a mid-infrared region and is excellent in transparency and thermal stability and the molded plate obtained therefrom are provided.

The invention relates to an Nb-doped nano indium tin oxide powder and a method for preparing high density sputtering coating target thereof. The method comprising the following steps: (1) dissolving high pure metals: high pure metal niobium, high pure metal indium and high pure metal tin are respectively dissolved into transparent solutions by inorganic acid; (2) mixing: the obtained transparent solutions are respectively filled into containers according to the proportion; (3) chemical precipitation: the three transparent solutions are made into Nb-doped and heavily tin-doped indium hydroxide nano-powder; (4) washing: the Nb-doped and heavily tin-doped tin indium hydroxide nano-powder is washed by de-ionized water and then precipitated; (5) calcinating: the nano-powder is calcined, and the Nb-doped nano indium tin oxide powder is prepared; (6) granulation: the Nb-doped nano indium tin oxide powder is added with a bonding agent and then dried, so that Nb-doped nano indium tin oxide powder before molding can be prepared; (7) molding: the Nb-doped nano indium tin oxide powder before molding is pressed into early embryo; (8) sintering: the early embryo is sintered under the normal pressure, and the high density sputtering coating target of the Nb-doped indium tin oxide can be prepared; in addition, pressure sintering can be adopted to further improve the density of the target.

The invention provides a method for preparing visible light-induced high catalysis activity tin-doping nanometer titanium oxide photo-catalyst, belonging to the photo-catalyst material technique. It comprises following steps: first preparing tin-doping TiO2 sol; then, preparing tin-doping TiO2 film. The invention comprises the advantages that the prepared nanometer TiO2 film doping with Sn4+ has the duplex grain structure between anatase and red schorl; the average size of crystal grain ranges between 25-30nm, while the red schorl is formed by solid solving the Sn4+ into TiO2 crystal lattice; the surface of transparent film is smooth with a certain coarseness; the absorption band to incident light of TiO2 photo-catalyst film is removed to visible light band by doping Sn4+ to improve the visible light-induced photo-catalyst. The photo-catalyst activity is presented as the photo-catalyst degradation rate of helianthin and doping Sn4+ in right amount can effectively improve the photo-catalyst activity of TiO2 film, while compared with absolute nanometer TiO2 film, its photo-catalyst degradation rate of helianthin is improved more than 34%.

A process for producing a substratum with conductive film excellent in surface smoothness, is provided which does not require complicated steps after film-forming such as heating treatment, polishing of film surface or oxygen plasma treatment after film-forming.

The present invention provides a substratum with conductive film comprising a substratum and a conductive film containing tin-doped indium oxide as the main component, wherein a foundation film containing zirconium oxide doped with yttrium oxide as the main component is formed on the substratum side of the conductive film, and wherein the content of yttrium oxide in the foundation film is preferably from 0.1 to 50 mol % based on the total amount of Y₂O₃ and ZrO₂.

The invention discloses a solar battery with a structure of an oxide-metal multilayer film/a silicon substrate. The solar battery structure, from the top to the bottom, successively comprises: a silver electrode, an oxide-metal multilayer film, a passivation layer, a silicon substrate and a full aluminum back electrode. The oxide-metal multilayer film is obtained through compositing a first oxide film, a metal film and a second oxide film. The first oxide film or the second oxide film is a MoO3 film, a tin-doped In2O3 film, a fluorine-doped SnO2 film or an aluminum-doped ZnO film. The metal film is an Ag film, an Au film or an Al film. The solar battery can prevent the tradition thermal diffusion or can prevent the auger recombination and the dead layer phenomenon which are caused by the preparation emission electrode of the ion injection method. Furthermore, the invention also discloses a method for the solar battery with a structure of an oxide-metal multilayer film/a silicon base, which is less in the preparation procedures, applicable to the batch production and high temperature free during the whole preparation process.

The present invention concerns an optical fiber 10 comprising a substantially pure silica glass core 12, a concentric tin-doped core/cladding interface region 14, and a concentric fluorine-doped depressed cladding layer 16. The tin-doped core/cladding interface region 14 comprises a low concentration gradient of tin dioxide, which advantageously results in a de minimis refractive index change, resistance to hydrogen incursion, and thermal stability of any fiber Bragg gratings written into the interface region 14.

A dispersion of tin-doped indium oxide fine particles has tin-doped indium oxide fine particles, a plasticizer for an interlayer film, an organic solvent containing alcohols as a main component, and a dispersion stabilizer, wherein under measuring conditions of a concentration of tin-doped indium oxide fine particles of 0.7% by weight and an optical path length of a glass cell of 1 mm, a visible light transmittance is 80% or more, a solar radiation transmittance at a wavelength within a range from 300 nm to 2100 nm is ¾ or less of the visible light transmittance, a haze value is 1.0% or less, and a reflection yellow index is −20 or more.

The invention relates to the field of a solar cell, and particularly to an organic-inorganic hybrid perovskite solar cell. The invention provides a tin-doped CH3NH3SnxPb1-xI3 perovskite solar cell, wherein an active layer is a tin-doped CH3NH3SnxPb1-xI3 perovskite film. The tin-doped CH3NH3SnxPb1-xI3 perovskite film has a planar heterojunction structure. The invention provides a method for preparing the tin-doped CH3NH3SnxPb1-xI3 perovskite solar cell according to a one-step method in which multiple solvent processing procedures are utilized. A high-quality perovskite film is obtained, and high photoelectric conversion efficiency is realized.

The invention discloses the indium oxide film adulterating with tin and the preparation technique of minute figures. The indium nitrate and the tin tetrachloride are put into the acetylacetone solrent, add the deionized water to it and get the solution A; add the chelating agent of benzoyl acetone into the ethylene glycol monomethyl ether solvent and get the solution B; mix the solution A with the solution B, whisk it, aggradate it and get the indium oxide sol adulterated with light sensitive tin. The high pressure mercury lamp or ultraviolet laser pass through the masking with minute figures, irradiate the indium oxide sol adulterated with light sensitive tin, irradiate it with ultraviolet light in the air environment, get rid of its masking, put it in the absolute ethyl alcohol, dissolve the part that is not irradiated by the ultraviolet light, keep the part irradiated, heat it to get rid of the organic material and get the minute figure of the indium oxide film adulterated with tin. The invention does not need special vacuum, reaction chamber, photoresist and corrosive medium, can produce great areal minute figure and can get the high class minute figures of the ITO film.

There is provided a production process of a heat-ray shielding film-formed base member comprising the steps of mixing a sol solution, formed by using a starting raw material of trialkoxysilane or trialkoxysilane and tetraalkoxysilane, with a solution in which tin-doped indium oxide ultra-fine particles are dispersed, to make a treatment agent; and applying the treatment agent to a base member. In this production process, the treatment agent has an organic solvent having a boiling point of 100-200° C. as a dispersion medium, and the application is conducted by a means by bringing a member retaining the treatment agent into contact with the base member or by a means by spraying the treatment agent, thereby adjusting haze value of the film to be formed to 0.5% or less.

The invention belongs to the technical field of photocatalysts, in particular to a preparation method of tin-doped cuprous oxide. The preparation method provided by the technical scheme of the invention comprises the following steps: adding ethanediol to cupric nitrate and stannous chloride to be prepared into a solution; stirring the solution fiercely and transferring into a high-pressure autoclave, reacting for 10 hours at 140 DEG C to obtain the precipitate; cleaning the precipitate and placing the cleaned precipitate into a vacuum drying oven for drying for 12 hours at 60 DEG C to obtain the end product. The preparation method of tin-doped cuprous oxide, provided by the invention, is simple in process, simple in equipment, and a solvothermal method is adopted, so that the solution is directly mixed to be placed in the high-pressure autoclave for reaction at 140 DEG C to obtain the end product, the yield is high, and the raw materials adopted by the method are abundant and non-toxic.

The invention discloses a completely transparent microfluidic acoustic body wave chip and a preparation method thereof. The product consists of three glass sheets and one piece of piezoelectric material. The three glass sheets are stacked from top to bottom to form a standing wave reaction chamber, the upper glass sheet is equipped with holes for fluid to come in and out by laser, and thick piecesof polydimethylsiloxane (PDMS) with corresponding holes are bonded to the surface holes. A micron-scale channel is prepared on the middle glass sheet by laser cutting and penetration of the glass. The lower glass is complete glass, and is used for chamber encapsulation. The piezoelectric material is made of lithium niobate single crystal, the upper surface and lower surface of the piezoelectric material are both plated with a layer of transparent tin-doped indium oxide (ITO) conductive film, and the piezoelectric material is sticked at the lower surface of a resonant cavity, both sides of thelithium niobate wafer undergo silver slurry curing, and two leads are led out. The chip prepared by the method provided by the invention is completely transparent and highly visible, and can be usedfor gathering, separation and manipulation of cells/particles and other samples. The preparation process adopted by the invention is simple, and the cost is low.

The invention relates to a tin-doped indium oxide (ITO)/gallium oxide (Ga2O3) double-layer structure deep-ultraviolet transparent conductive film and a preparation method thereof, and belongs to the technical field of electronic materials. The preparation method comprises the following steps: ultraviolet optical quartz glass is used as the substrate, and radio-frequency magnetron sputtering is carried out on the Ga2O3 ceramic target to prepare a Ga2O3 layer the thickness of which is 30-60 nm; and direct-current magnetron sputtering is carried out on an ITO target to prepare an ITO layer the thickness of which is 15-29 nm. The pressure intensity of argon gas for sputtering is 0.2-2 Pa, the power for radio-frequency sputtering is 50-100 W, the substrate temperature is 200-300 DEG C, the current for direct-current sputtering is 80-150 mA, and the voltage for direct-current sputtering is 200-400 V. The prepared film has the advantages of low resistivity, high transmittivity within the range of visible light, ultraviolet light and deep-ultraviolet light, and other favorable photoelectric properties. The film otained by the method of the invention has wide application prospects in the fields of ultraviolet photoelectric devices and the like.

The invention belongs to a lithium ion battery positive electrode material, and particularly relates to a tin-doped lithium-rich manganese-based positive electrode material and a preparation method thereof. The materials are metered according to stoichiometry; manganese salt, nickel salt, cobalt salt and tin salt are mixed to prepare a mixed salt aqueous solution, and performing coprecipitation toform a precursor precipitate; and mixing the precursor precipitate with a lithium source compound, and carrying out sectional heat treatment to obtain the tin-doped lithium-rich manganese-based positive electrode material of which the chemical formula is Li[LiaMnbCocNidSnx]O2, wherein a + b + c + d + x = 1, a, b, c, d and x is more than 0. The coprecipitation method for preparing the tin-doped lithium-rich manganese-based positive electrode material is simple in technological process, convenient to operate and suitable for industrial large-scale production.

The invention belongs to the technical field of semiconductor device preparation, and relates to a gallium oxide single crystal based radiation detector and a preparation method thereof. The radiation detector takes a high-resistance gallium oxide single crystal as a substrate, the upper and lower surfaces and the side surfaces of the gallium oxide single crystal are provided with an SiO2 protection layer, a tin-doped gallium oxide layer, a titanium layer and a gold layer which are formed by tin atom diffusion are sequentially arranged in a mask pattern formed at the lower surface of the SiO2 layer of the gallium oxide single crystal; and a nickel layer, a titanium layer and a gold layer are sequentially arranged in a mask pattern formed at the upper surface of the SiO2 protection layer of the gallium oxide single crystal, and each layer has an overlapping region with the SiO2 protection layer retained at the upper surface. The invention provides an effective, simple and convenient processing and manufacturing technology, a problem of preparation for a high-performance gallium oxide radiation detector is solved, and the development of a novel gallium oxide based radiation detector is realized.