Preparation method of TiO2/porous g-C3N4 composite material

Abstract

The invention relates to the field of semiconductor materials and aims at providing a preparation method of a TiO2 / porous g-C3N4 composite material. The preparation method of the TiO2 / porous g-C3N4 composite material comprises the following steps: dropwise adding H2SO4 aqueous solution into melamine aqueous solution to form a white suspension solution; stirring at the temperature of 80 DEG C for 2 hours to obtain sediment; filtering the sediment and respectively washing the sediment for three times by using distilled water and absolute ethyl alcohol, drying the washed sediment at the temperature of 60 DEG C for 24 hours to obtain melamine sulphate; adding the melamine sulphate into a corundum boat, subsequently sintering the melamine sulphate in a tubular furnace, cooling the melamine sulphate to room temperature and grinding an obtained yellow polymerization product into powder particles to obtain g-C3N4 particles. The preparation method of the TiO2 / porous g-C3N4 composite material has the beneficial effects that the g-C3N4 polymerization temperature is effectively reduced; by virtue of the protonation of the melamine, the polymerization energy of melamine is reduced; the melamine can polymerize at relatively low temperature to generate graphite-like g-C3N4.

Description

technical field [0001] The present invention relates to the field of semiconductor materials, in particular to TiO 2 / Porous g-C 3 N 4 Methods of preparation of composite materials. Background technique [0002] Graphite-like carbon nitride (g-C 3 N 4 ) has shown good application prospects in the fields of solar energy utilization and environmental protection because of its special physical and chemical properties. g-C 3 N 4 It is an organic polymer semiconductor with an energy gap of about 2.7eV. It is simple to prepare and has good chemical stability, but the pure phase g-C 3 N 4 The low specific surface area, weak separation ability of photogenerated charge carriers, and poor photocatalytic activity limit the wide application of this material. At present, there are many methods to improve g-C 3 N 4 The structure and morphology of the base material can be used to improve its photocatalytic performance, such as element doping, porous and nanostructure structure,...

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Problems solved by technology

g-C 3 N 4 It is an organic polymer semiconductor with an energy gap of about 2.7eV. It is simple to prepare and has good chemical stability, but the pure phase g-C 3 N 4 The low specific surface area, weak separation ability of photogenerated carriers, and poor photocatalytic activity limit the wide application of this material.

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