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A Substrate Movement Method for Improving Thickness Uniformity of Magnetron Sputtering Rectangular Target

A magnetron sputtering, rectangular target technology, applied in sputtering coating, ion implantation coating, metal material coating process and other directions, can solve the problem of uneven film thickness, etc. uniform effect

Active Publication Date: 2016-08-24
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] The embodiment of the present invention solves the problem of non-uniform thickness of the film in the prior art when the film is formed on the substrate by the magnetron sputtering method by providing a method for moving the substrate to improve the film thickness uniformity of the magnetron sputtering target. Technical problems, and then achieved the technical effect of improving the uniformity of film thickness

Method used

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  • A Substrate Movement Method for Improving Thickness Uniformity of Magnetron Sputtering Rectangular Target
  • A Substrate Movement Method for Improving Thickness Uniformity of Magnetron Sputtering Rectangular Target
  • A Substrate Movement Method for Improving Thickness Uniformity of Magnetron Sputtering Rectangular Target

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Embodiment 2

[0035] In embodiment two, compared with embodiment one, only the spacing D of reciprocating scanning is changed, and the 120mm of embodiment one is increased to 140mm, and the eccentric rotation time compensated with it is shortened to 12s. In Example 2, the film thickness non-uniformity is close to 3%.

[0036] When using the magnetron sputtering method to sputter the substrate, it can specifically be DC magnetron sputtering, radio frequency magnetron sputtering, intermediate frequency magnetron sputtering, and pulse magnetron sputtering. Let me go into more detail.

[0037] Therefore, by adopting the technical solution of the embodiment of the present invention, not only is it simple and easy to implement, but also for a rectangular target, the non-uniformity of the film thickness on the entire circular substrate with a diameter of 100mm can be controlled within 3%-4%, and a large Film thickness uniformity across the area.

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Abstract

The invention discloses a substrate movement method for improving the film thickness uniformity of a magnetron sputtering rectangular target. There is a strip-shaped ring-shaped etching ring on the target, and the circular substrate faces the rectangular target. Set the reciprocating motion between the first turning point 1 and the second turning point 2 at the laterally symmetrical position, including the following content: the circular substrate simultaneously moves at a constant speed between the first turning point 1 and the second turning point 2 at a distance of D Linear motion and uniform rotation motion, and the circular substrate simultaneously performs uniform linear motion and uniform rotation motion from the first reentry point 1 to the second reentry point 2. The first duration is t 1 ; When the circular substrate is at the first turning point 1 or the second turning point 2, the circular substrate stays for a second duration t 2 Only for uniform rotation motion; adjust the first time length t 1 and the second duration t 2 The ratio makes the film thickness of the circular substrate uniform, thereby achieving the technical effect of improving the uniformity of film thickness.

Description

technical field [0001] The invention relates to the technical field of thin film preparation, in particular to a substrate movement method for improving the film thickness uniformity of a magnetron sputtering rectangular target. Background technique [0002] Most films must meet some degree of thickness uniformity when they are applied. Sputtering is a commonly used thin film preparation method. In order to improve the uniformity of film thickness, it is usually based on the shape of the sputtering target (plane circular target, rectangular target, facing target, hollow cathode target, etc.), using a suitable substrate- Target relative motion method, and optimize the relative geometric orientation and distance of substrate and target. [0003] For rectangular planar sputtering targets, the currently used substrate motion methods mainly include linear scanning, circular rotation scanning, and planetary motion (combined motion of public rotation and rotation). Either way, si...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/54C23C14/35C23C14/50
Inventor 杜晓松郭攀赵瑾珠孙凤佩袁欢蒋亚东
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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