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Semiconductor device and method of manufacturing the same

A manufacturing method, semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as short channel effect of field effect transistors

Active Publication Date: 2019-04-05
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Increased integration of semiconductor devices leads to short channel effects in field effect transistors

Method used

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  • Semiconductor device and method of manufacturing the same
  • Semiconductor device and method of manufacturing the same
  • Semiconductor device and method of manufacturing the same

Examples

Experimental program
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Embodiment Construction

[0029] The advantages and features of the present invention and methods for achieving them may be more readily understood by referring to the following detailed description of example embodiments and accompanying drawings. However, this invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the concept of the invention to those skilled in the art, and the present invention will only be defined by the appended claims. In the drawings, the thicknesses of layers and regions are exaggerated for clarity.

[0030] It will be understood that when an element or layer is referred to as being "on" or "connected to" another element or layer, it can be directly on or directly connected to the other element or layer, Alternatively, intervening elements or layers may be present. In contrast, when an elemen...

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PUM

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Abstract

The invention provides a semiconductor device and a manufacturing method thereof. A manufacturing method of a semiconductor device includes: providing an active fin and a field insulating film including a first trench disposed on the active fin; Etching to form a second trench; forming a first region and a second region in the field insulating film by performing a second etching of the field insulating film disposed on sidewalls and lower portions of the second trench, the first region being adjacent to the active The fin is disposed and has a first thickness, a second region is disposed spaced apart from the active fin compared to the first region and has a second thickness thicker than the first thickness; and a gate structure is formed on the active fin and the field insulating film. .

Description

technical field [0001] The invention relates to a semiconductor device and a manufacturing method thereof. Background technique [0002] Recently, semiconductor devices such as field effect transistors capable of performing high-speed operations at low voltages have been developed, and manufacturing processes of semiconductor devices exhibiting increased integration have been developed. The increased integration of semiconductor devices can lead to short channel effects in field effect transistors. To overcome this effect, Fin Field Effect Transistors (FinFETs) have been developed, which have channels formed as 3D spatial structures. Contents of the invention [0003] Embodiments of the present invention provide a method of manufacturing a semiconductor device with improved operating characteristics. [0004] Other advantages, objects and features of the present invention will be partly set forth in the following description, and will be partly apparent to those skilled ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L21/28H01L29/78H01L29/423
CPCH01L29/66795H01L29/785H01L21/311H01L21/76224
Inventor 金成玟姜智秀李东奎车东镐
Owner SAMSUNG ELECTRONICS CO LTD