Solar cell device and production method thereof
A technology for solar cells and devices, which is applied in the fields of electric solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., and can solve the problems of low energy conversion efficiency of solar cells
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[0034] Please also see figure 2, the preparation method of the solar cell device 100 of an embodiment, it comprises the following steps:
[0035] Step S110 , preparing a hole buffer layer 20 on the surface of the anode 10 by spin coating.
[0036] The anode 10 is indium tin oxide glass (ITO), fluorine doped tin oxide glass (FTO), aluminum doped zinc oxide glass (AZO) or indium doped zinc oxide glass (IZO).
[0037] In this embodiment, the pretreatment of the anode 10 includes removing organic pollutants on the surface of the anode 10 and performing oxygen ion treatment on the anode 10 . The anode 10 is ultrasonically cleaned with detergent, deionized water, acetone, ethanol, and isopropanone for 15 minutes to remove organic pollutants on the surface of the substrate 10; the anode 10 is treated with oxygen ion for 5 minutes to 15 minutes, and the power is 10 minutes. ~50W.
[0038] The hole buffer layer 20 is prepared by spin-coating a solution containing a hole buffer mate...
Embodiment 1
[0054] The structure prepared in this embodiment is: ITO / PEDOT:PSS / P3HT:PC 61 BM / PEDOT:PC61BM:TPBI / P3HT:PC 61 BM / LiF / Al solar cell devices. Wherein, " / " indicates a stacked structure, and ":" indicates doping or mixing, and the following embodiments are the same.
[0055] First, carry out photolithography treatment on ITO, cut it into the required size, and then use detergent, deionized water, acetone, ethanol, and isopropanol to sonicate for 15 minutes each to remove organic pollutants on the glass surface; clean the conductive substrate Oxygen plasma treatment is carried out, the treatment time is 5-15min, and the power is 10-50W; the hole buffer layer is prepared by spin coating, the material is PEDOT:PSS The mass ratio is 3:1, the mass fraction of PEDOT is 3%, and the spin coating The rotating speed is 3000rpm, the time is 15s, after spin coating, heat at 200°C for 30min, and the thickness is 60nm; spin coat the first active layer, the first active layer is composed of P...
Embodiment 2
[0062] The structure prepared in this example is IZO / PEDOT:PSS / P3HT:PC 61 BM / P3AT:C60:Bphen / P3HT:PC 61 BM / Cs 2 CO 3 / Au solar cell devices.
[0063] First, IZO is subjected to photolithography treatment, cut into the required size, and then ultrasonicated with detergent, deionized water, acetone, ethanol, and isopropanol for 15 minutes each to remove organic pollutants on the glass surface; after cleaning, clean the conductive substrate Perform oxygen plasma treatment, the treatment time is 5-15min, and the power is 10-50W; the hole buffer layer is prepared by spin coating, the material is PEDOT:PSS The mass ratio is 2:1, the mass fraction of PEDOT is 5%, and the spin coating The rotation speed is 6000rpm, the time is 30s, after spin coating, heat at 100°C for 60min, and the thickness is 20nm; spin coat the first active layer, the first active layer is composed of P3HT and PC with a concentration of 8mg / ml 61 The solution of BM was spin-coated, the solvent was toluene, P3H...
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