Optimized flash memory address mapping method

A technology of address mapping and flash memory, which is applied in the field of optimized flash memory address mapping to achieve the effects of improving utilization, saving cache access time, and simplifying the access process

Active Publication Date: 2015-01-07
LANGCHAO ELECTRONIC INFORMATION IND CO LTD
View PDF4 Cites 48 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It is worth noting that there are only 4 items of address mapping information actually updated, but it causes update operations corresponding to 4 conversion

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Optimized flash memory address mapping method
  • Optimized flash memory address mapping method
  • Optimized flash memory address mapping method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0036] Below according to accompanying drawing of description, in conjunction with specific embodiment, the present invention is further described:

[0037] An optimized flash memory address mapping method, in the demand-based page-level address mapping (DFTL) method, a global translation page mapping table GTD is maintained in the memory, and at the same time, the address mapping cache CMT is used in the memory to cache the conversion For frequently accessed address mapping items in a page, the data unit of the cache is the entire address translation page, which unifies the granularity of the address mapping information in the flash memory and the cache, and each address translation page contains the mapping information of the 1MB address space. For frequent access to local data, you only need to access the page-level address mapping cache without accessing the flash memory; at the same time, when a translation page needs to be replaced out of the cache, all the updated addres...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an optimized flash memory address mapping method. The optimized flash memory address mapping method includes steps: maintaining a global transformation page mapping table GTD in a memory by using a page level address mapping DFTL method based on requirements, and simultaneously using an address mapping cache CMT in the memory so as to cache address mapping items frequently accessed in a transformation page, wherein a cached data unit is a whole address transformation page. The optimized flash memory address mapping method unifies granularities of address mapping information in a flash memory and the cache, and fully uses local properties of time and space of data. When a person frequently accesses the local data in a short time, the person only needs to access the page level address mapping cache, and does not need to access the flash memory, and simultaneously when the person needs to displace a certain transformation page from the cache, all the updated address mapping information can be updated into the flash memory together, and use rate of the address mapping information is improved.

Description

technical field [0001] The invention relates to the technical field of flash memory, in particular to an optimized flash memory address mapping method. Background technique [0002] With the development and maturity of flash memory technology, flash memory has been widely used in various storage systems, such as U disk, smart phone, tablet computer, digital memory card, solid state drive, etc. Compared with traditional disk storage, flash memory has the advantages of high read and write performance, non-volatility, low power consumption, high density and good shock resistance. Therefore, flash memory has become a storage medium for mobile embedded devices. However, flash memory also has some limitations, such as "off-site update" and limited block erase times. In order to solve these deficiencies and make flash memory work like a traditional block device, an embedded software called flash translation layer (FTL) appears in the flash memory storage system, which is used to ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G06F12/02G06F12/08G06F12/1009
CPCG06F12/0246G06F2212/7201
Inventor 杨晋博尹艳艳张新玲
Owner LANGCHAO ELECTRONIC INFORMATION IND CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap