Storage device and its data reading and writing method

Abstract

The present invention provides a storage device and a method for reading and writing data thereof, wherein the storage device at least includes: a phase-change memory chip; a phase-change memory interface control module coupled to the phase-change memory chip; an SD card coupled to an external device An interface control module; and a storage controller coupled to the phase change memory interface control module and the SD interface control module, for responding to a data read or write command from the SD interface control module, and through the The phase change memory interface control module controls reading or writing of the phase change memory chip. The storage device of the present invention is an SD card based on a phase-change memory, adopts a phase-change memory chip as a storage medium, and can perform random reading and writing. In addition, compared with FLASH, operations such as bad block management and ECC error correction are also simpler, and the bad block shielding function is realized, and it has the characteristics of anti-fatigue.

Description

technical field [0001] The invention relates to the technical field of micro-nano electronics, in particular to a storage device and a data reading and writing method thereof. Background technique [0002] Phase Change Random Access Memory (PCRAM) is a new type of non-volatile random access memory. Its basic principle is to use chalcogenide compounds as storage media, and make phase change materials in polycrystalline (low resistance ) and the amorphous (high resistance) state, and use the difference between the two states to represent binary data. PCRAM is fully compatible with CMOS standard technology in terms of technology, and has the characteristics of fast operation speed, good fatigue resistance and miniaturization, and has very broad commercial prospects in terms of low voltage, low power consumption, high speed, high density and embedded storage. . PCRAM is considered to be the next-generation non-volatile memory that is most likely to replace flash memory (FLASH)...

AI Technical Summary

Problems solved by technology

[0005] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a storage device and its data reading and writing method, which is used to solve the problem that the SD card in the prior art must perform a block erase operation before writing data, and cannot realize " rewrite" problem

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