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LED chips with patterned n-electrodes

A LED chip and graphic technology, applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve problems such as uneven current distribution, loss of reflected light, and reduced light contribution, so as to improve the uniformity of light emission and heat dissipation, and the current evenly distributed effect

Inactive Publication Date: 2017-10-17
ENRAYTEK OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Generally, when making vertical structure LEDs, metal silver is usually used as the reflector, but due to the easy diffusion of Ag, a barrier layer (barrier) will be made to wrap the reflector, and there will be about 5 μm to 10 μm around each chip without reflection layer (eg figure 1 ),exist figure 1 Among them, the reflector 20 is surrounded by the blocking layer 10. Since the reflector 20 is used to reflect light, and the blocking layer 10 is limited by the material, the reflected light is extremely weak, causing a large part of the reflected light in this area to be lost. After the general "ten" or "m" shaped N electrode, the current distribution in this area is not uniform, and the contribution to light emission is also greatly reduced.

Method used

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  • LED chips with patterned n-electrodes
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  • LED chips with patterned n-electrodes

Examples

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Embodiment 1

[0024] Please refer to figure 2 and image 3 , in this embodiment, a LED chip with a patterned N electrode is proposed, including: a reflector 110, a barrier layer 100, an epitaxial layer and an N electrode 300, and the reflector 110 is formed in the barrier layer 100 And expose a surface of the mirror 110, the epitaxial layer is formed on the surface of the mirror 110 and the barrier layer 100, the N electrode 300 is formed on the surface of the epitaxial layer, the N electrode 300 includes a center A region 310 and an interposer 320, a part of the interposer 320 is formed on the surface of the epitaxial layer directly above the barrier layer 100, the interposer 320 completely or partially covers the surface of the epitaxial layer directly above the barrier layer 100, the interposer Fingers 320 are connected to said central area 310 .

[0025] Specifically, please refer to image 3 , the epitaxial layer includes P-GaN210, quantum well 220 and N-GaN230 formed in sequence, ...

Embodiment 2

[0030] In this embodiment, the proposed LED chip with a patterned N electrode is an improvement on Embodiment 1, the difference lies in that the shape of the finger 320 of the N electrode 300 is octagonal, and another difference is that it is different from the The central area 310 is polygonal, and the side length of the central area is in the range of 30 μm-100 μm, for example, 60 μm. The rest are the same as those in Embodiment 1, and will not be repeated here. For details, please refer to Embodiment 1.

[0031] Since the insertion finger 320 in the first embodiment is in the shape of a square with a corner of 90°, the current distribution at this location is relatively dense, making the current distribution near this area uneven, which affects the luminous efficiency to a certain extent. Therefore, please refer to Figure 4 ( Figure 4 In this example, the insert finger 320 is modified from the square shape in the first example to an octagon, which can solve the phenomen...

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Abstract

The invention relates to an LED (Light Emitting Diode) chip with a graphical N electrode. A barrier layer which is extremely weak in light reflection is formed in a marginal area between LED chips, and the N electrode is expanded to be right above the barrier layer, so that on one hand, the reflecting efficiency of a reflecting mirror is not influenced due to the fact that the N electrode is expanded to be on the barrier layer which is extremely weak in light reflection, and on the other hand, the uniformity of luminance and heat dissipation of the LED chip is improved as the expanded N electrode can enable current distribution to be more uniform.

Description

technical field [0001] The invention relates to the field of LED manufacturing, in particular to an LED chip with patterned N electrodes. Background technique [0002] With the gradual application of LEDs in the field of lighting, the market has higher and higher requirements for the light efficiency of white LEDs. GaN-based vertical structure LEDs have good heat dissipation capabilities and can withstand large current injections. Such a vertical structure LED chip can be equivalent to several The conversion cost is only a fraction of the formal structure chip. Therefore, GaN-based vertical structure LEDs are the direction of the market and an inevitable trend in the development of semiconductor lighting. Compared with the traditional planar structure LED, the vertical structure LED has many advantages: the two electrodes of the vertical structure LED are on both sides of the LED, the current almost all flows vertically through the epitaxial layer, there is no lateral flow ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/38H01L33/44
CPCH01L33/38H01L33/44
Inventor 张琼吕孟岩童玲张宇李起鸣
Owner ENRAYTEK OPTOELECTRONICS