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Thin film transistor and method of manufacturing the same, and display unit and electronic apparatus

A technology of thin-film transistors and semiconductors, applied in the direction of transistors, circuits, electrical components, etc., can solve problems such as roughness, lower reliability, uneven panel, etc., and achieve the effect of easing the electric field and reducing leakage current

Inactive Publication Date: 2015-02-11
JOLED INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If a large amount of this off-state current flows into the thin film transistors constituting the display device, non-bright spots and bright spots will occur, and characteristic defects such as unevenness and roughness will appear on the panel, reducing reliability

Method used

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  • Thin film transistor and method of manufacturing the same, and display unit and electronic apparatus
  • Thin film transistor and method of manufacturing the same, and display unit and electronic apparatus
  • Thin film transistor and method of manufacturing the same, and display unit and electronic apparatus

Examples

Experimental program
Comparison scheme
Effect test

no. 1 approach

[0048] 1. First embodiment (example using side walls and complete light-shielding structure)

[0049] 1-1. Overall composition

[0050] 1-2. Manufacturing method

[0051] 1-3. Display device

[0052] 1-4. Functions and effects

no. 2 approach

[0053] 2. Second Embodiment (Example Using a Rectangular Insulating Film and a Complete Light-shielding Structure)

[0054] 3. Modification 1 (Example using side walls and partial light-shielding structure)

[0055] 4. Modification 2 (example using a rectangular insulating film and a partial light-shielding structure)

[0056] 5. Modification 3 (Example in which a channel protective film is provided on a semiconductor film)

[0057] 6. Application example

[0058] (first embodiment)

[0059] (1.1 Overall composition)

[0060] Figure 1A shows a planar configuration of a bottom gate type (inverted staggered type) thin film transistor (thin film transistor 10) according to the first embodiment of the present disclosure, Figure 1B Schematically shows the thin film transistor 10 along Figure 1AThe cross section shown by the dotted line I-I. For example, the thin film transistor 10 is a TFT using polysilicon or the like as the semiconductor film 14, and is used, for example,...

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PUM

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Abstract

There are provided a thin film transistor having a simple structure that allows reduction in leakage current at the time of gate negative bias, and a method of manufacturing the thin film transistor, and a display unit and an electronic apparatus. The thin film transistor includes: a gate electrode; a semiconductor film including a channel region that faces the gate electrode; and an insulating film provided at least at a position near an end portion on the gate electrode side of side walls of the semiconductor film.

Description

technical field [0001] The present technology relates to a thin film transistor (TFT) having a bottom gate structure, a manufacturing method thereof, and a display device and electronic equipment including the thin film transistor. Background technique [0002] In a thin film transistor when the gate is turned off, leakage current (off-state current) may flow between the source and the drain. If a large amount of such off-state current flows into thin film transistors constituting a display device, dull spots and bright spots are generated, and characteristic defects such as unevenness and roughness occur on the panel, thereby reducing reliability. The off-state current is mainly caused by carriers generated due to the high electric field regions between the source and the channel and between the drain and the channel, and is significant in the state of negative gate bias. [0003] On the other hand, securing the on-state current is also important from the viewpoint of the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/66H01L29/786
CPCH01L29/66765H01L51/0545H01L29/7869H01L29/78678H01L29/78669H10K10/466H01L29/78603H01L29/78606H01L2924/13069H10K59/1213H01L29/42384H01L29/66969H01L29/78609
Inventor 菅野道博河村隆宏
Owner JOLED INC