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Thyristor random access memory device and method

A memory, thyristor technology, used in thyristors, transistors, semiconductor devices, etc.

Active Publication Date: 2015-02-18
MICRON TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, device configurations to date use a considerable amount of surface area

Method used

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  • Thyristor random access memory device and method
  • Thyristor random access memory device and method
  • Thyristor random access memory device and method

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Embodiment Construction

[0028] In the following detailed description of the invention, reference is made to the accompanying drawings which form a part hereof, and in which are shown by way of illustration specific embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. Other embodiments may be utilized and chemical, structural, logical, electrical changes, etc. may be made.

[0029] The terms "wafer" and "substrate" as used in the following description include any structure having an exposed surface by which a device or integrated circuit (IC) structure is formed. The term "substrate" is understood to include semiconductor wafers. The term "substrate" is also used to refer to a semiconductor structure during processing and may include other layers, such as silicon-on-insulator (SOI), that have been fabricated thereon. Both wafers and substrates include doped and undoped semiconductors, e...

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Abstract

Memory devices and methods of making memory devices are shown. Methods and configurations as shown provide folded and vertical memory devices for increased memory density. Methods provided reduce a need for manufacturing methods such as deep dopant implants.

Description

[0001] Information about divisional applications [0002] This case is a divisional application. The parent case of this divisional case is an invention patent application with an application date of June 28, 2011, an application number of 201180036064.1, and an invention title of "thyratron random access memory device and method". [0003] priority application [0004] This patent application claims the benefit of priority to US Application Serial No. 12 / 826,323, filed June 29, 2010, which is incorporated herein by reference. technical field [0005] The present invention relates to memory devices and methods of fabricating memory devices. Background technique [0006] Thyristor Random Access Memory (TRAM) provides a memory structure that does not require storage capacitors to store memory states. However, device configurations have thus far used a considerable amount of surface area. Improvements in device configuration are needed to further improve memory density. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/105H01L27/108H01L21/8242H10B12/00H10B99/00
CPCH01L29/74H01L29/42308H01L27/1027H01L29/66363H10B99/20H01L2924/1301
Inventor 山·D·唐约翰·K·查胡瑞迈克尔·P·瓦奥莱特
Owner MICRON TECH INC